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TPGAD1S03H, TPGAD1S09H Datasheet

Excelitas Technologies

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Datasheet

www.excelitas.com
Prelim Datasheet SMD 905nm Laser-Rev 2018.03 Page 1 of 7
Preliminary DATASHEET
Photon Detection
Surface Mount 905 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Family for Commercial Range Finding
Excelitas Technologies’ pulsed semiconductor laser, emitting at 905nm in
the near IR, uses a multi-layer monolithic chip design. The laser diode is
mounted on an FR4 substrate leadless laminate carrier (LLC) with excellent
thermal management. This is intended for both surface mount applications
and hybrid integration. The encapsulate material is an epoxy resin for low
cost and high-volume manufacturing.
The package design and assembly processing techniques are such that the
die positioning is well controlled to the reference surfaces, as shown in
Figure 5. This aids in the alignment of optical elements to the package and
is superior to many of the commercially available plastic lead frame TO-18
and SMD style packages in the market. Quantum well laser design offers
rise and fall times of <1 ns however the drive circuit layout and package
inductance play a dominant role and should be designed accordingly.
Near field profile
Key Features
Concentrated emitting source size for
high power into aperture
Multi-Epi Quantum well structure
Excellent power stability with
temperature
RoHS compliant
Applications
LIDAR
Range finding
Safety light curtains
Adaptive cruise control
Laser therapy
Excelitas’ pulsed semiconductor laser produces very high peak optical pulses
centered at a wavelength of 905 nm. The package design can emit light
parallel or perpendicular to the mounting plane.
www.excelitas.com Page 2 of 7 Prelim Datasheet SMD 905nm Laser-Rev 2018.03
Surface Mount 905 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Family for Commercial Range Finding
Table 1: Maximum Ratings
Parameter
Symbol
Minimum
Maximum
Units
Peak Reverse Voltage
VRM
6
V
Pulse Duration
tW
100
ns
Duty Factor
du
0.1
%
Storage Temperature
TS
-40
105
°C
Operating Temperature
TOP
-40
85
°C
Soldering for 5 Seconds
260
°C
Table 2: General Electro-optical Specifications at 23°C
Parameter
Symbol
Minimum
Typical
Maximum
Units
Centre Wavelength of Spectral Envelope
C
895
905
915
nm
Spectral Bandwidth at 50% Intensity Points

5
nm
Wavelength Temperature Coefficient
T/
0.25
nm/°C
Beam Spread (50% Intensity Points) Parallel
to Junction Plane
θ||
10
degrees
Beam Spread (50% Intensity Points)
Perpendicular to Junction Plane
θ|
25
degrees
Table 3: Electro-optical Specifications at 23°C
Test Conditions: 50ns, 1 kHz
TPGAD1S03H
TPGAD1S09H
Characteristics
Symbol
Minimum
Typical
Maximum
Minimum
Typical
Maximum
Units
Emitting Area
76 X 10
229 X 10
µm
Optical Power Output
PO
18
20
65
70
W
Drive Current
iFM
10
30
A
Forward Voltage at iFM1
VF
11
13.5
V
Threshold Current
iTH
0.75
1.75
A
Series Resistance
Rs
0.454
0.23
Bandgap Voltage Drop
Vg
6.5
6.5
V
Note 1: As estimated by 𝑉
𝐹= 𝑅𝑆𝑖𝐹+ 𝑉
𝑔.
www.excelitas.com Page 3 of 7 Prelim Datasheet SMD 905nm Laser-Rev 2018.03
Surface Mount 905 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Family for Commercial Range Finding
Electro-Optical Characteristics
Figure 1:
Peak Radiant Intensity vs. Temperature
Total Peak Radiant Intensity vs. Peak Drive Current
Figure 2:
Center Wavelength vs. Temperature
Radiant Intensity vs. F Number
Figure 3:
Radiant Intensity vs. Half Angle
Spectral Distribution Plot
0
10
20
30
40
50
60
70
80
90
100
110
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Relative Radiant Intensity [%]
Temperature [C]
0
10
20
30
40
50
60
70
80
90
100
010 20 30 40 50 60 70 80 90 100
Total Peak Radiant Intensity as a ratio of the
Maximum Output Power at the Maximum
Rated Current [%]
Peak Drive Current as a ratio of the
Maximum Rated Current
880
885
890
895
900
905
910
915
920
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80
Center wavelength [nm]
Temperature [C]
1
10
100
0.1 1 10 100
Relative Radiant Intensity [%]
F-number
1
10
100
110 100
Relative Radiant Intensity [%]
Cone Half angle [degrees]
0
10
20
30
40
50
60
70
80
90
100
880 890 900 910 920 930
Relative Radiant Intensity [%]
Wavelength [nm]
www.excelitas.com Page 4 of 7 Prelim Datasheet SMD 905nm Laser-Rev 2018.03
Surface Mount 905 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Family for Commercial Range Finding
Figure 4:
Far Field Pattern Parallel to Junction Plane
Far Field Pattern Perpendicular to Junction Plane
Figure 5: Package Mechanical Dimensions
0
10
20
30
40
50
60
70
80
90
100
-30 -20 -10 0 10 20 30
Relative Radiant Intensity [%]
Angle [degrees]
0
10
20
30
40
50
60
70
80
90
100
-50 -40 -30 -20 -10 0 10 20 30 40 50
Relative Radiant Intensity [%]
Angle [degrees]
www.excelitas.com Page 5 of 7 Prelim Datasheet SMD 905nm Laser-Rev 2018.03
Surface Mount 905 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Family for Commercial Range Finding
Figure 6: Recommended typical solder reflow profile (specific reflow soldering parameters depend on
solder alloy used).
Profile Feature
Symbol
Value
Units
Pre-Heat
Temperature min
Tsmin
150
°C
Temperature max
Tsmax
200
°C
Time (Tsmin to Ts max)
ts
75
seconds
Temperature maintained above
TL
217
°C
Time maintained above TL
tL
65
seconds
Peak Temperature
TP
244
°C
Time within 5°C of the actual peak temperature (Tp)
25
seconds
Ramp down rate
2
°C/second
Time25°C to Peak Temperature
4
Minutes
For hand soldering, the maximum temperature should be 260°C, and the time at that temperature should be <25s.
www.excelitas.com Page 6 of 7 Prelim Datasheet SMD 905nm Laser-Rev 2018.03
Surface Mount 905 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Family for Commercial Range Finding
Figure 7: Tape and Reel Packaging Dimensions
MLS Rating
This series of laser diodes comply with a Moisture Sensitivity Level (MSL) rating of 3 as defined in IPC/JEDEC- J-STD-033C.
This allows for up to 168 hour floor life at < 30°C / 60%RH once removed from the sealed reel packaging. For complete
details refer to the IPC/JEDEC- J-STD-033C specification.
www.excelitas.com Page 7 of 7 Prelim Datasheet SMD 905nm Laser-Rev 2018.03
Surface Mount 905 nm Pulsed Semiconductor Lasers
High Power Laser-Diode Family for Commercial Range Finding
For Your Safety: Laser Radiation
Under operation, these devices produce invisible electromagnetic radiation that may be harmful to the human eye. To
ensure that these laser components meet the requirements of Class IIIb laser products, they must not be operated
outside their maximum ratings. Power supplies used with these components must be such that the maximum peak
forward current cannot be exceeded. It is the responsibility of the user incorporating a laser into a system to certify the
Class of use and ensure that it meets the requirements of the ANSI or appropriate authority.
Further details may be obtained in the following publications:
21CFR 1040.10 Performance Standards for Light Emitting Products (Laser Products)”
ANSI Z136.1 “American National Standard for Safe use of Lasers
IEC 60825-1 “Safety of Laser Products”
RoHS Compliance
This series of laser diodes are designed and built to be fully compliant with the European Union Directive
2011/65/EU Restriction of the use of certain Hazardous Substances in Electrical and Electronic equipment.
Warranty
A standard 12-month warranty following shipment applies.
Excelitas Technologies
22001 Dumberry Road
Vaudreuil-Dorion, Quebec
Canada J7V 8P7
Telephone: (+1) 450.424.3300
Toll-free: (+1) 800.775.6786
Fax: (+1) 450.424.3345
detection.na@excelitas.com
Excelitas Technologies
GmbH & Co. KG
Wenzel-Jaksch-Str. 31
D-65199 Wiesbaden
Germany
Telephone: (+49) 611 492 430
Fax: (+49) 611 492 165
detection.europe@excelitas.com
Excelitas Technologies Singapore, Pte. Ltd.
8 Tractor Road
Singapore 627969
Telephone: (+65) 6775 2022 (Main number)
Telephone: (+65) 6770 4366 (Customer Service)
Fax: (+65) 6778-1752
detection.asia@excelitas.com
For a complete listing of our global offices, visit www.excelitas.com/locations
© 2014 Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries that are
depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors.
About Excelitas Technologies
Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet
the lighting, detection and other high-performance technology needs of OEM customers.
Excelitas has a long and rich history of serving our OEM customer base with optoelectronic sensors and modules for
more than 45 years beginning with PerkinElmer, EG&G, and RCA. The constant throughout has been our innovation
and commitment to delivering the highest quality solutions to our customers worldwide.
From aerospace and defense to analytical instrumentation, clinical diagnostics, medical, industrial, and safety and
security applications, Excelitas Technologies is committed to enabling our customers' success in their specialty end-
markets. Excelitas Technologies has approximately 5,000 employees in North America, Europe and Asia, serving
customers across the world.

Products

LASER DIODE 905NM 70W 3LCC
Available Quantity823
Unit Price44.66