DMN6140L Datasheet

Diodes Incorporated

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Datasheet

DMN6140L
Document number: DS35621 Rev. 4 - 2
1 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN6140L
NEW PROD UCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(on) max
60V
140m @ VGS = 10V
170m @ VGS = 4.5V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Analog Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0072 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN6140L-7
SOT23
3,000/Tape & Reel
DMN6140L-13
SOT23
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Pin Configuration
D
GS
SOT23
N61 = Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
D
S
G
Equivalent Circuit
N61
YM
e3
DMN6140L
Document number: DS35621 Rev. 4 - 2
2 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN6140L
NEW PROD UCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
20
V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
1.6
1.2
A
t<10s
TA = +25°C
TA = +70°C
ID
2.0
1.6
A
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
2.3
1.8
A
t<10s
TA = +25°C
TA = +70°C
ID
2.9
2.3
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
1.5
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
IDM
10
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
0.7
W
TA = +70°C
0.4
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RJA
183
°C/W
t<10s
115
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.3
W
TA = +70°C
0.8
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RJA
94
°C/W
t<10s
61
Thermal Resistance, Junction to Case
RJC
39
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
1
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
1
3
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)
92
140
mΩ
VGS = 10V, ID = 1.8A
115
170
VGS = 4.5V, ID = 1.3A
Forward Transfer Admittance
|Yfs|
2.2
S
VDS = 15V, ID = 1.8A
Diode Forward Voltage
VSD
0.75
1.0
V
VGS = 0V, IS = 0.45A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
315
pF
VDS = 40V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
18
Reverse Transfer Capacitance
Crss
16
Gate Resistnace
Rg
0.65
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 10V)
Qg
8.6
nC
VDS = 30V, ID = 1.8A
Total Gate Charge (VGS = 5V)
Qg
4.1
Gate-Source Charge
Qgs
1.0
Gate-Drain Charge
Qgd
1.7
Turn-On Delay Time
tD(on)
2.6
ns
VDS = 30V, VGS = 10V,
RG = 6.0ΩID = 1.8A
Turn-On Rise Time
tr
3.6
Turn-Off Delay Time
tD(off)
16.3
Turn-Off Fall Time
tf
2.7
Reverse Recovery Time
trr
16.8
ns
IF = 1.8A, di/dt =100A/µs
Reverse Recovery Charge
Qrr
9.0
nC
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1in. square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN6140L
Document number: DS35621 Rev. 4 - 2
3 of 6
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December 2014
© Diodes Incorporated
DMN6140L
NEW PROD UCT
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I , DRAIN CURRENT (A)
D
V = 4.5V
GS
V = 3.5V
GS
V = 3.0V
GS
V = 2.5V
GS
V = 10V
GS
V = 4.0V
GS
0
2
4
6
8
0 1 2 3 4 5
V , GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
GS
I , DRAIN CURRENT (A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
1 2 3 4 5 6 7 8
V = 4.5V
GS
V = 10V
GS
0
0.1
0.2
0.3
0.4
0.5
2 3 4 5 6 7 8 9 10
V , GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On Resistance
vs. Gate-Source Voltage
GS
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I = 1.8A
D
I = 1.3A
D
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
0.36
0.4
0 1 2 3 4 5 6 7 8
I , DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I = 2.5A
GS
D
V = V
I =5.0A
GS
D
10
DMN6140L
Document number: DS35621 Rev. 4 - 2
4 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN6140L
NEW PROD UCT
0
0.06
0.12
0.18
0.24
0.3
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
I = 2.5A
GS
D
V = V
I = 5.0A
GS
D
10
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
-50 -25 0 25 50 75 100 125 150
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
0
1
2
3
4
5
6
7
8
9
10
0 0.2 0.4 0.6 0.8 1 1.2
I , SOURCE CURRENT (A)
S
T = 25°C
A
10
100
1000
0 5 10 15 20 25 30 35 40
V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
C , JUNCTION CAPACITANCE (pF)
T
f=1MHz
Ciss
Coss
Crss
0
2
4
6
8
10
0 2 4 6 8 10
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
g
V GATE THRESHOLD VOLTAGE (V)
GS
V = 30V
I = A
DS
D
1.8
0.001
0.01
0.1
1
10
100
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
R
Limited
DS(on)
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
Wµ
T = 150°C
T = 25°C
J(max)
A
V = 10V
Single Pulse
DUT on 1*MRP board
GS
I , DRAIN CURRENT (A)
D
DMN6140L
Document number: DS35621 Rev. 4 - 2
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www.diodes.com
December 2014
© Diodes Incorporated
DMN6140L
NEW PROD UCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R (t) = r(t) * R
R = 169°C/W
Duty Cycle, D = t1/ t2

JA JA
JA
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
All Dimensions in mm
Dimensions
Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
XE
Y
C
Z
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
DMN6140L
Document number: DS35621 Rev. 4 - 2
6 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DMN6140L
NEW PROD UCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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