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DMG6601LVT Datasheet

Diodes Incorporated

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Datasheet

DMG6601LVT
Document number: DS35405 Rev. 4 - 2
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DMG6601LVT
ADVANCE INFORMTION
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS R
DS(ON) max Package ID max
T
A
= +25°C
Q1 30V
55m @ VGS = 10V TSOT26 3.8A
65m @ VGS = 4.5V TSOT26 3.6A
Q2 -30V
110m @ VGS = -10V TSOT26 -2.5A
142m @ VGS = -4.5V TSOT26 -2.1A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Features
Complementary MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMG6601LVT-7 TSOT26 3K/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
66G = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
e4
S1
G1
D1
Q1
S2
G2
D2
Q2
N-Channel P-Channel
Device Schematic
66G
YM
TSOT26
Top View Top View
1
2
3
6
5
4
D1
S1
D2
G1
S2
G2
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
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DMG6601LVT
ADVANCE INFORMTION
Maximum Ratings - Q1 and Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Q1 Q2 Units
Drain-Source Voltage VDSS 30 -30 V
Gate-Source Voltage VGSS ±12 ±12 V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C ID 3.8
3.0
-2.5
-2 A
t<10s TA = +25°C
TA = +70°C ID 4.5
3.4
-3
-2.3 A
Maximum Body Diode Forward Current (Note 6) IS 1.5 -1.5 A
Pulsed Drain Current (Note 6) IDM 20 -15 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) TA = +25°C PD 0.85 W
TA = +70°C 0.54
Thermal Resistance, Junction to Ambient (Note 5) Steady state RJA 147 °C/W
t<10s 103
Total Power Dissipation (Note 6) TA = +25°C PD 1.3 W
TA = +70°C 0.83
Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 96
°C/W
t<10s 67
Thermal Resistance, Junction to Case (Note 6) R
JC 36
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics - Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 30 - - V
VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current @TJ = +25°C IDSS - - 1 A VDS = 30V, VGS = 0V
Gate-Source Leakage IGSS - - ±100 nA
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
0.5 1 1.5 V
VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS (ON)
- 34 55
m
VGS = 10V, ID = 3.4A
- 38 65 VGS = 4.5V, ID = 3A
49 85 VGS = 2.5V, ID = 2A
Forward Transfer Admittance |Yfs| - 6 - S
VDS = 5V, ID = 3.4A
Diode Forward Voltage (Note 7) VSD - 0.75 1.0 V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss - 422 - pF
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 41 - pF
Reverse Transfer Capacitance Crss - 39 - pF
Gate resistance R
g
1.26 - VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V) Q
g
- 5.4 - nC
VGS = 10V, VDS = 15V,
ID = 3.1A
Total Gate Charge (VGS = 10V) Q
g
12.3 - nC
Gate-Source Charge Q
g
s - 0.8 - nC
Gate-Drain Charge Q
g
d - 1.2 - nC
Turn-On Delay Time tD
(
on
)
- 1.6 - ns
VDS = 15V, VGS = 10V,
RL = 4.7, RG =3,
Turn-On Rise Time t
r
- 7.4 - ns
Turn-Off Delay Time tD
(
off
)
- 31.2 - ns
Turn-Off Fall Time tf - 15.6 - ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMG6601LVT
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DMG6601LVT
ADVANCE INFORMTION
Electrical Characteristics - Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -30 - - V
VGS = 0V, ID = -250A
Zero Gate Voltage Drain Current @TJ = +25°C IDSS - - -1 A VDS = -30V, VGS = 0V
Gate-Source Leakage IGSS - - ±100 nA
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
-0.4 -0.8 -1.2 V VDS = VGS, ID = -250A
Static Drain-Source On-Resistance RDS (ON)
- 70 110
m
VGS = -10V, ID = -2.3A
- 81 142 VGS = -4.5V, ID = -2A
105 190 VGS = -2.5V, ID = -1A
Forward Transfer Admittance |Yfs| - 5.3 - S
VDS = -5V, ID = -2.3A
Diode Forward Voltage (Note 7) VSD - -0.8 -1.0 V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss - 541 - pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 46 - pF
Reverse Transfer Capacitance Crss - 43 - pF
Gate resistance R
g
- 16.9 - VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V) Q
g
- 6.5 - nC
VGS = -10V, VDS = -15V,
ID = -2.3A
Total Gate Charge (VGS = -10V) Q
g
13.8 - nC
Gate-Source Charge Q
g
s - 1.0 - nC
Gate-Drain Charge Q
g
d - 1.6 - nC
Turn-On Delay Time tD
(
on
)
- 1.7 - ns
VDS = -15V, VGS = -10V,
RL = 6, RG = 3,
Turn-On Rise Time t
r
- 4.6 - ns
Turn-Off Delay Time tD
(
off
)
- 18.3 - ns
Turn-Off Fall Time tf - 2.2 - ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
N Channel - Q1
12
16
20
0 0.5 1.0 1.5 2.0
0
4
8
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DS
I, D
AI
E
(A)
D
V= 2.5V
GS
V= 3.0V
GS
V= 3.5V
GS
V= 4.0V
GS
V= 4.5V
GS
V= 5.0V
GS
V= 10V
GS
V= 2.0V
GS
0
5
10
15
20
01 2 34
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
ENT (A)
D
T = 150°C
A
T = 12C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V = 5.0V
DS
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
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DMG6601LVT
ADVANCE INFORMTION
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0
0 5 10 15 20
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
, D
AIN-S
U
CE
N-
ESISTANCE ( )
DS(ON)
V = 2.5V
GS
V = 10V
GS
V = 4.5V
GS
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
2345 678910
0
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
I= 2A
D
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0 2 4 6 8 101214161820
0.10
0
I , DRAIN CURRENT (A)
D
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-S
O
URCE
O
N-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.6
0.8
1.2
1.4
1.6
1.8
1.0
-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)
Fig. 6 On-Resistance Variation with Temperature
J
, D
AI
-S
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I= 5A
GS
D
V=V
I = 10A
GS
D
10
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 On-Resistance Variation with Temperature
J
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
V= V
I= 5A
GS
D
4.5
V=V
I= 10A
GS
D
10
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.0
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
J
V,
G
ATE T
H
R
ES
H
O
LD V
O
LTA
G
E (V)
GS(th)
I= 1mA
D
I = 250µA
D
DMG6601LVT
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DMG6601LVT
ADVANCE INFORMTION
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
ENT (A)
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
1,000
100
10
, J
N
I
N
A
A
I
AN
E (p
)
T
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C
iss
C
oss
C
rss
f = 1MHz
02 468101214
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
Q(nC)
g
, TOTAL GATE CHARGE
Fig. 11 Gate Charge
V= 15V
I= A
DS
D
3.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
R (t) = r(t) * R
R = 143°C/W
Duty Cycle, D = t1/ t2

JA JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
DMG6601LVT
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ADVANCE INFORMTION
P Channel - Q2
0
2
4
6
8
0 0.5 1.0 1.5 2.0
10
-V , DRAIN -SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristics
DS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V= -3.0V
GS
V= -3.5V
GS
V= -4.0V
GS
V= -4.5V
GS
V= -10V
GS
V= -5.0V
GS
V= -2.5V
GS
V= -2.0V
GS
0
2
4
6
8
01 2 34
10
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 14 Typical Transfer Characteristics
-I , D
R
AI
N
C
U
R
R
E
N
T (A)
D
T = 150C
A
T = 125C
A
T = 85C
A
T = 25C
A
T = -55C
A
V = -5.0V
DS
0.02
0.04
0.06
0.08
0.12
0.14
0.16
0.18
02 46 810
0.10
0.20
0
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(ON)
-I , DRAIN SOURCE CURRENT (A)
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
V = -4.5V
GS
V = -10V
GS
V = -2.5V
GS
0.04
0.08
0.12
0.16
2345678910
0
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 16 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
I= -2A
D
0.04
0.08
0.12
0.16
02 4 6 810
0.20
0
-I , DRAIN SOURCE CURRENT (A)
Fig. 17 Typical On-Resistance vs.
Drain Current and Temperature
D
R , DRAIN-S
O
URCE
O
N-RESISTANCE ( )
DS(ON)
T = -55C
A
T = 25C
A
T = 85C
A
T = 125C
A
T = 150C
A
V= -4.5V
GS
0.6
0.8
1.2
1.4
1.8
1.0
, D
AI
-S
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
1.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 18 On-Resistance Variation with Temperature
V = -4.5V
I = -5A
GS
D
V = -10V
I = -10A
GS
D
DMG6601LVT
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DMG6601LVT
ADVANCE INFORMTION
0.04
0.08
0.12
0.16
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 19 On-Resistance Variation with Temperature
, D
AIN-S
E
N-
ESIS
AN
E ( )
DS(on)
V=5V
I= A
GS
D
-4.
-5
V= -10V
I= A
GS
D
-10
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.0
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 20 Gate Threshold Variation vs. Ambient Temperature
A
-V ,
G
ATE T
H
R
ES
H
O
LD V
O
LTA
G
E (V)
GS(TH)
-I = 1mA
D
-I = 250µA
D
0
2
4
6
8
10
0 0.3 0.6 0.9 1.2 1.5
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 21 Diode Forward Voltage vs. Current
SD
-I , S
E
EN
(A)
S
T= 25C
A
T= -55C
A
T= 85C
A
T= 125C
A
T= 150C
A
0 5 10 15 20 25 30
1,000
100
10
, J
I
A
A
I
A
E (p
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 22 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
02 468101214
Q , TOTAL GATE CHARGE (nC)
Fig. 23 Gate-Charge Characteristics
g
0
2
4
6
8
10
-V ,
A
E-S
E V
L
A
E (V)
GS
V = -15V
I= -2.3A
DS
D
DMG6601LVT
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DMG6601LVT
ADVANCE INFORMTION
Package Outline Dimensions
Suggested Pad Layout
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Fig. 24 Transient Thermal Resistance
R (t) = r(t) * R
R = 143°C/W
Duty Cycle, D = t1/ t2

JA JA
JA
0.001
0.01
0.1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
1
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
TSOT26
Dim Min Max Typ
A  1.00
A1 0.01 0.10
A2 0.84 0.90
D 2.90
E 2.80
E1 1.60
b 0.30 0.45
c 0.12 0.20
e 0.95
e1 1.90
L 0.30 0.50
L2 0.25
θ 0° 8°
θ1 4° 12°
All Dimensions in mm
Dimensions Value
(in mm)
C 0.950
X 0.700
Y 1.000
Y1 3.199
c
A
1
L
E1 E
A2
D
e1
e
6x b
4x 1

L2
A
Y1
C C
X (6x)
Y (6x)
DMG6601LVT
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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