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EPC's white paper the die size optimization process for selecting the eGaN FET optimal on-resistance is discussed and an example application is used to show specific results
This paper focuses on EPC RF characterization in the frequency range from 200 MHz through 2.5 GHz.
In this paper the basic electrical characteristics of EPC eGaN FETs are explained and compared against silicon MOSFETs.
In this article, EPC focuses on loosely coupled coils, highly-resonant wireless solutions suitable for the A4WP  standard operating at either 6.78 MHz or 13.56 MHz unlicensed Industrial, Scientific and Medical (ISM)  bands.
For over three decades, power management efficiency and cost showed steady improvement as innovations in EPC power MOSFET structures, technology, and circuit topologies paced the growing need for electrical power in our daily lives.
EPC's white paper will study the effect of parasitic inductance on performance for eGaN FET and MOSFET based point of load (POL) buck converters operating at a switching frequency of 1 MHz, an input voltage of 12 V, an output voltage of 1.2 V, and an output current up to 20 A.
In this white paper EPC eGaN FET technology is applied in a high frequency resonant converter.
For applications requiring high power density and high power, but not requiring electrical isolation, the buck converter from EPC has been the workhorse topology for many years.
DC-DC converter designers can achieve higher power density at lower power levels by using forward converters from EPC with synchronous rectification and gallium nitride transistors.
In this white paper we continue our exploration of optimization issues  and look at the impact of dead-time on system efficiency for EPC eGaN® FETs and MOSFETs.
DC-DC converter designers can achieve low cost at low power densities by using flyback converters from EPC and enhancement mode gallium nitride transistors.
In this white paper EPC looks at a new application that is being enabled by gallium nitride technology that has been difficult to implement using traditional silicon MOSFET power devices.
EPC's Isolated full bridge converters are widely used in servers and telecommunication systems and are available in a variety of standard sizes, input and output voltage ranges.
EPC eGaN FETs differ from their silicon counterparts because of their significantly faster switching speeds and consequently have different requirements for gate drive, layout, and thermal management which can all be interactive.
EPC's white paper will explore the optimization of PCB layout for an eGaN FET based point of load (POL) buck converter, comparing the conventional designs and proposing a new optimal layout to further reduce parasitics.
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