USD
Print Print this page
 
Rohm Semiconductor
Silicon Carbide Schottky Diode
SemiQ
Silicon Carbide Schottky Diode
 
STMicroelectronics
Silicon Carbide Schottky Diode
  • Images

Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode

SemiQ

Features
  • High surge current capable
  • Zero reverse recovery current
  • High bandwidth
  • Fast, temperature-independent switching
Applications
  • Motor drives
  • Switch mode power supplies
  • Power factor correction
  • Diode snubber
Specifications
  • Current - Average Rectified (Io) (per Diode):20A ~ 150A
  • Current - Reverse Leakage @ Vr:100µA ~ 750µA
  • Current Coupled to Voltage - Forward (Vf) (Max) @ If:20A ~ 60A
  • Diode Configuration:2 Independent
  • Diode Type:Silicon Carbide Schottky
  • Mounting Type:Chassis Mount
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Package / Case:SOT-227-4, miniBLOC
  • Reverse Recovery Time (trr):0ns
  • Supplier Device Package:SOT-227
  • Voltage - DC Reverse (Vr) (Max):600V ~ 1700V
  • Voltage - Forward (Vf) (Max) @ If:1.7V ~ 1.9V
  • Voltage Coupled to Current - Reverse Leakage @ Vr:600V ~ 1700V
Parts

View in Parametric Search

GHXS030A120S-D3GHXS030A120S-D3DIODE SCHOTKY 1200V 30A SOT227 2 IndependentSilicon Carbide Schottky1200V30ASOT-227-4, miniBLOCRoHS
GHXS050A170S-D3GHXS050A170S-D31700V 50A SIC SBD PARALLEL 2 IndependentSilicon Carbide Schottky1700V150ASOT-227-4, miniBLOCRoHS
GHXS020A060S-D3GHXS020A060S-D3DIODE SBD SHOTT 600V 20A SOT227 2 IndependentSilicon Carbide Schottky600V20ASOT-227-4, miniBLOCRoHS
GHXS050A060S-D3GHXS050A060S-D3DIODE SCHOTT SBD 600V 50A SOT2272 IndependentSilicon Carbide Schottky600V50ASOT-227-4, miniBLOCRoHS
GHXS060A120S-D3GHXS060A120S-D3DIODE MOD SCHOT 1200V 60A SOT2272 IndependentSilicon Carbide Schottky1200V60ASOT-227-4, miniBLOCRoHS

View in Parametric Search