USD
Print Print this page
 
Vishay Siliconix
P-Channel MOSFET (Metal Oxide)
GeneSiC Semiconductor
SiC (Silicon Carbide Junction Transistor)
 
Microchip Technology
SiC (Silicon Carbide Junction Transistor)

SiC (Silicon Carbide Junction Transistor)

SiC (Silicon Carbide Junction Transistor)

GeneSiC Semiconductor

GeneSiC is developing an innovative power device, the Super Junction Transistor (SJT). SJTs are "Super-High" current gain SiC BJTs being developed by GeneSiC in 1200 V - 10 kV ratings. The SJTs are gate-oxide free, normally-off, quasi-majority carrier devices with a square reverse biased safe operation area (RBSOA) and a slightly positive temperature co-efficient of on-resistance. The SJT is a current controlled device require a small gate current that can be driven by commercial, commonly available gate drivers. Incorporating high voltage, high frequency and high-temperature capable SiC SJTs will increase conversion efficiency and reduce the size/weight/volume of power electronics.

Features
  • Temperature independent switching performance
  • Gate oxide free SiC switch
  • Suitable for connecting an anti-parallel diode
  • Positive temperature coefficient for easy paralleling
  • Low gate charge
  • Low intrinsic capacitance
  • Low switching losses
  • Higher efficiency
  • High temperature operation
  • High short circuit withstand capability
Applications
  • Down Hole Oil Drilling, Geothermal Instrumentation
  • Hybrid Electric Vehicles
  • Solar Inverters
  • Switched-Mode Power Supply
  • Power Factor Correction
  • Induction Heating
  • Uninterruptible Power Supply
  • Motor Drives
Specifications
  • Drain to Source Voltage (Vdss):100V ~ 1700V
  • Input Capacitance (Ciss) (Max) @ Vds:1403pF ~ 3091pF
  • Technology:SiC (Silicon Carbide Junction Transistor)
  • Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds:800V
Parts

View in Parametric Search

GA05JT12-263GA05JT12-263TRANS SJT 1200V 15A -SiC (Silicon Carbide Junction Transistor)15A (Tc)-TO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
GA20JT12-263GA20JT12-263TRANS SJT 1200V 45A -SiC (Silicon Carbide Junction Transistor)45A (Tc)-TO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
GA10JT12-263GA10JT12-263TRANS SJT 1200V 25A -SiC (Silicon Carbide Junction Transistor)25A (Tc)--RoHS
GA08JT17-247GA08JT17-247TRANS SJT 1700V 8A TO-247AB -SiC (Silicon Carbide Junction Transistor)8A (Tc) (90°C)-TO-247-3RoHS
GA05JT01-46GA05JT01-46TRANS SJT 100V 9A -SiC (Silicon Carbide Junction Transistor)9A (Tc)-TO-46-3RoHS
GA05JT03-46GA05JT03-46TRANS SJT 300V 9A -SiC (Silicon Carbide Junction Transistor)9A (Tc)-TO-46-3RoHS
G2R1000MT33JG2R1000MT33J3300V 1000M TO-263-7 G2R SIC MOSN-ChannelSiC (Silicon Carbide Junction Transistor)4A (Tc)1.2Ohm @ 2A, 20VTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
G3R350MT12DG3R350MT12D1200V 350M TO-247-3 G3R SIC MOSFN-ChannelSiC (Silicon Carbide Junction Transistor)11A (Tc)420mOhm @ 4A, 15VTO-247-3RoHS
G2R1000MT17DG2R1000MT17D1700V 1000M TO-247-3 G2R SIC MOSN-ChannelSiC (Silicon Carbide Junction Transistor)4A (Tc)1.2Ohm @ 2A, 20VTO-247-3RoHS
G3R350MT12JG3R350MT12J1200V 350M TO-263-7 G3R SIC MOSFN-ChannelSiC (Silicon Carbide Junction Transistor)11A (Tc)420mOhm @ 4A, 15VTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
G2R1000MT17JG2R1000MT17J1700V 1000M TO-263-7 G2R SIC MOSN-ChannelSiC (Silicon Carbide Junction Transistor)3A (Tc)1.2Ohm @ 2A, 20VTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
G3R160MT12DG3R160MT12D1200V 160M TO-247-3 G3R SIC MOSFN-ChannelSiC (Silicon Carbide Junction Transistor)22A (Tc)192mOhm @ 10A, 15VTO-247-3RoHS
G3R450MT17DG3R450MT17D1700V 450M TO-247-3 G3R SIC MOSFN-ChannelSiC (Silicon Carbide Junction Transistor)9A (Tc)585mOhm @ 4A, 15VTO-247-3RoHS
G3R160MT12JG3R160MT12J1200V 160M TO-263-7 G3R SIC MOSFN-ChannelSiC (Silicon Carbide Junction Transistor)22A (Tc)192mOhm @ 10A, 15VTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
G3R450MT17JG3R450MT17J1700V 450M TO-263-7 G3R SIC MOSFN-ChannelSiC (Silicon Carbide Junction Transistor)9A (Tc)585mOhm @ 4A, 15VTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
G3R75MT12DG3R75MT12D1200V 75M TO-247-3 G3R SIC MOSFEN-ChannelSiC (Silicon Carbide Junction Transistor)41A (Tc)90mOhm @ 20A, 15VTO-247-3RoHS
G3R75MT12KG3R75MT12K1200V 75M TO-247-4 G3R SIC MOSFEN-ChannelSiC (Silicon Carbide Junction Transistor)41A (Tc)90mOhm @ 20A, 15VTO-247-4RoHS
G3R75MT12JG3R75MT12J1200V 75M TO-263-7 G3R SIC MOSFEN-ChannelSiC (Silicon Carbide Junction Transistor)42A (Tc)90mOhm @ 20A, 15VTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
G3R160MT17DG3R160MT17D1700V 160M TO-247-3 G3R SIC MOSFN-ChannelSiC (Silicon Carbide Junction Transistor)21A (Tc)208mOhm @ 12A, 15VTO-247-3RoHS
G3R160MT17JG3R160MT17J1700V 160M TO-263-7 G3R SIC MOSFN-ChannelSiC (Silicon Carbide Junction Transistor)22A (Tc)208mOhm @ 12A, 15VTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
G3R40MT12DG3R40MT12D1200V 40M TO-247-3 G3R SIC MOSFEN-ChannelSiC (Silicon Carbide Junction Transistor)71A (Tc)48mOhm @ 35A, 15VTO-247-3RoHS
G3R40MT12KG3R40MT12K1200V 40M TO-247-4 G3R SIC MOSFEN-ChannelSiC (Silicon Carbide Junction Transistor)71A (Tc)48mOhm @ 35A, 15VTO-247-4RoHS
G3R40MT12JG3R40MT12J1200V 40M TO-263-7 G3R SIC MOSFEN-ChannelSiC (Silicon Carbide Junction Transistor)75A (Tc)48mOhm @ 35A, 15VTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
G3R30MT12KG3R30MT12K1200V 30M TO-247-4 G3R SIC MOSFEN-ChannelSiC (Silicon Carbide Junction Transistor)90A (Tc)36mOhm @ 50A, 15VTO-247-4RoHS
G3R30MT12JG3R30MT12J1200V 30M TO-263-7 G3R SIC MOSFEN-ChannelSiC (Silicon Carbide Junction Transistor)96A (Tc)36mOhm @ 50A, 15VTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
G3R45MT17DG3R45MT17D1700V 45M TO-247-3 G3R SIC MOSFEN-ChannelSiC (Silicon Carbide Junction Transistor)61A (Tc)58mOhm @ 40A, 15VTO-247-3RoHS
G3R45MT17KG3R45MT17K1700V 45M TO-247-4 G3R SIC MOSFEN-ChannelSiC (Silicon Carbide Junction Transistor)61A (Tc)58mOhm @ 40A, 15VTO-247-4RoHS
G3R20MT12KG3R20MT12K1200V 20M TO-247-4 G3R SIC MOSFEN-ChannelSiC (Silicon Carbide Junction Transistor)128A (Tc)24mOhm @ 60A, 15VTO-247-4RoHS
G3R20MT12NG3R20MT12N1200V 20M SOT-227 G3R SIC MOSFETN-ChannelSiC (Silicon Carbide Junction Transistor)105A (Tc)24mOhm @ 60A, 15VSOT-227-4, miniBLOCRoHS
G2R120MT33JG2R120MT33J3300V 120M TO-263-7 G2R SIC MOSFN-ChannelSiC (Silicon Carbide Junction Transistor)--TO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
G3R20MT17KG3R20MT17K1700V 20M TO-247-4 G3R SIC MOSFEN-ChannelSiC (Silicon Carbide Junction Transistor)124A (Tc)26mOhm @ 75A, 15VTO-247-4RoHS
G3R20MT17NG3R20MT17N1700V 20M SOT-227 G3R SIC MOSFETN-ChannelSiC (Silicon Carbide Junction Transistor)100A (Tc)26mOhm @ 75A, 15VSOT-227-4, miniBLOCRoHS

View in Parametric Search