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Micron Technology Inc.
DDR4 SDRAM
Micron Technology Inc.
RLDRAM 2
 
Micron Technology Inc.
SDRAM Automotive and Industrial SDR
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RLDRAM 2

Reduced-latency DRAM (RLDRAM®)

Micron Technology Inc.

The Micron® RLDRAM® 2 is a high-performance, high-density memory solution that offers fast SRAM-like random access and outpaces even leading-edge DDR3 for sustained high bandwidth. RLDRAM® 2 uses innovative circuit design to minimize the time between the beginning of an access cycle and the instant that the first data is available. These traits make RLDRAM® 2 an ideal choice for 10GbE, 40GbE, and 100GbE packet buffering and inspections, and it’s supported on a wide variety of FPGAs and network processor solutions.

Specifications
  • Access Time:20ns
  • Clock Frequency:400MHz
  • Memory Format:DRAM
  • Memory Interface:Parallel
  • Memory Type:Volatile
  • Mounting Type:Surface Mount
  • Operating Temperature:0°C ~ 95°C (TC)
  • Package / Case:144-TBGA ~ 144-TFBGA
  • Supplier Device Package:144-FBGA (18.5x11)
  • Technology:DRAM
  • Voltage - Supply:1.7V ~ 1.9V
Parts

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MT49H16M18SJ-25:B TRMT49H16M18SJ-25:B TRIC DRAM 288M PARALLEL 144FBGA VolatileDRAMDRAM288Mb (16M x 18)144-TBGA
MT49H8M36SJ-25:B TRMT49H8M36SJ-25:B TRIC DRAM 288M PARALLEL 144FBGA VolatileDRAMDRAM288Mb (8M x 36)144-TFBGA
MT49H16M18CSJ-25:B TRMT49H16M18CSJ-25:B TRIC DRAM 288M PARALLEL 144FBGA VolatileDRAMDRAM288Mb (16M x 18)144-TBGA

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