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Texas Instruments
Analog Front Ends (AFEs)
IXYS
Rectifier Avalanche Diode
 
Nexperia USA Inc.
General Purpose Controlled Avalanche Diode
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Rectifier Avalanche Diode

Avalanche Diode

IXYS

IXYS Corporation offers a broad line of high power semiconductors.

Datasheets:
Specifications
  • Current - Average Rectified (Io):2.3A
  • Current - Reverse Leakage @ Vr:700µA
  • Current Coupled to Voltage - Forward (Vf) (Max) @ If:7A
  • Diode Type:Avalanche
  • Mounting Type:Through Hole
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Package / Case:Radial
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Voltage - DC Reverse (Vr) (Max):1200V ~ 1800V
  • Voltage - Forward (Vf) (Max) @ If:1.34V
  • Voltage Coupled to Current - Reverse Leakage @ Vr:1200V ~ 1800V
Parts

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DSA1-18DDSA1-18DDIODE AVALANCHE 1.8KV 2.3A Avalanche1800V2.3A1.34VRadialRoHS
DSA1-12DDSA1-12DDIODE AVALANCHE 1.2KV 2.3A Avalanche1200V2.3A1.34VRadialRoHS
DSA1-16DDSA1-16DDIODE AVALANCHE 1.6KV 2.3A Avalanche1600V2.3A1.34VRadialRoHS

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