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Panasonic Electronic Components
P-Channel MOSFET (Metal Oxide)
Renesas Electronics America
P-Channel MOSFET (Metal Oxide)
 
Rohm Semiconductor
P-Channel MOSFET (Metal Oxide)
Renesas Electronics America

P-Channel MOSFET (Metal Oxide)

P-Channel MOSFET (Metal Oxide)

Renesas Electronics America

Datasheets:
Specifications
  • Current - Continuous Drain (Id) @ 25°C:20A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • FET Type:P-Channel
  • Gate Charge (Qg) (Max) @ Vgs:38nC
  • Input Capacitance (Ciss) (Max) @ Vds:1900pF
  • Mounting Type:Through Hole
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-220-3 Isolated Tab
  • Packaging:Bulk
  • Power Dissipation (Max):2W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs:48mOhm @ 10A, 10V
  • Supplier Device Package:TO-220 Isolated Tab
  • Technology:MOSFET (Metal Oxide)
  • Vgs (Max):±20V
  • Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs:10V
  • Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds:10V
Parts