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Vishay Siliconix
N-Channel Logic Level Gate FETs
Cree/Wolfspeed
N-Channel Silicon Carbide (SiC)
 
Infineon Technologies
N-Channel Silicon Carbide (SiC)
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N-Channel Silicon Carbide (SiC)

N-Channel Silicon Carbide (SiC)

Cree/Wolfspeed

Cree/Wolfspeed offers an all-silicon carbide high performance, half-bridge module C2M MOSFET and Z-Rec™ diode that enables compact, lightweight systems, and is high effecient with reduced thermal requirements.

Specifications
  • Current - Continuous Drain (Id) @ 25°C:444A (Tc) ~ 450A
  • FET Feature:Silicon Carbide (SiC)
  • FET Type:2 N-Channel (Half Bridge)
  • Input Capacitance (Ciss) (Max) @ Vds:38000pF @ 800V
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Power - Max:850W ~ 3000W
  • Supplier Device Package:Module
Parts

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CAS325M12HM2CAS325M12HM2MOSFET 2N-CH 1200V 444A MODULE 2 N-Channel (Half Bridge)Silicon Carbide (SiC)1200V (1.2kV)444A (Tc)ModuleRoHS
CAB450M12XM3CAB450M12XM31.2KV 450A SIC HALF BRIDGE MOD 2 N-Channel (Half Bridge)Silicon Carbide (SiC)1200V450AModule

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