USD
Print Print this page
 
Microchip Technology
N-Channel SiCFET
ON Semiconductor
N-Channel SiCFET
 
Rohm Semiconductor
N-Channel SiCFET
  • Images

N-Channel SiCFET

N-channel MOSFET

ON Semiconductor

Specifications
  • Drain to Source Voltage (Vdss):900V ~ 1200V
  • Drive Voltage (Max Rds On, Min Rds On):15V ~ 20V
  • FET Type:N-Channel
  • Gate Charge (Qg) (Max) @ Vgs:56nC ~ 220nC
  • Input Capacitance (Ciss) (Max) @ Vds:1670pF ~ 4415pF
  • Technology:SiCFET (Silicon Carbide)
  • Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs:15V ~ 20V
  • Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds:450V ~ 800V
Parts

View in Parametric Search

NTHL060N090SC1NTHL060N090SC1SIC MOS TO247-3L 60MOHM N-ChannelSiCFET (Silicon Carbide)900V46A (Tc)TO-247-3 VariantRoHS
NTHL020N090SC1NTHL020N090SC1SIC MOS TO247-3L 20MOHM 9 N-ChannelSiCFET (Silicon Carbide)900V118A (Tc)TO-247-3 VariantRoHS
NTHL020N120SC1NTHL020N120SC1SIC MOS TO247-3L 20MW 120 N-ChannelSiCFET (Silicon Carbide)1200V103A (Tc)TO-247-3 VariantRoHS
NVHL020N120SC1NVHL020N120SC1SIC MOS TO247-3L 20MW 120 N-ChannelSiCFET (Silicon Carbide)1200V103A (Tc)TO-247-3 VariantRoHS
NVHL020N090SC1NVHL020N090SC1SIC MOS TO247-3L 20MOHM 9 N-ChannelSiCFET (Silicon Carbide)900V118A (Tc)TO-247-3 VariantRoHS
NTHL080N120SC1NTHL080N120SC1SIC MOS TO247 80MW 1200V N-ChannelSiCFET (Silicon Carbide)1200V44A (Tc)TO-247-3RoHS
NVHL080N120SC1NVHL080N120SC1SIC MOS TO247-3L 80MW 120 N-ChannelSiCFET (Silicon Carbide)1200V44A (Tc)TO-247-3RoHS
NTBG020N090SC1NTBG020N090SC1SIC MOS D2PAK 7L 20MOHM N-ChannelSiCFET (Silicon Carbide)900V9.8A (Ta), 112A (Tc)TO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
NVBG020N090SC1NVBG020N090SC1SIC MOS D2PAK 7L 20MOHM N-ChannelSiCFET (Silicon Carbide)900V9.8A (Ta), 112A (Tc)TO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
NTBG020N120SC1NTBG020N120SC1SIC MOS D2PAK-7L 20MW 120 N-ChannelSiCFET (Silicon Carbide)1200V8.6A (Ta), 98A (Tc)TO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS

View in Parametric Search