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N-Channel MOSFET (Metal Oxide)
IXYS Integrated Circuits Division
N-Channel MOSFET (Metal Oxide)
 
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N-Channel MOSFET (Metal Oxide)
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N-Channel MOSFET (Metal Oxide)

N-Channel MOSFET (Metal Oxide)

IXYS Integrated Circuits Division

These devices utilize proprietary third-generation vertical DMOS process. The third generation process realizes high voltage MOSFET performance in a silicon gate process.

Features
  • Low RDS(on) at cold temperatures
  • Low on resistance
  • High input impedance
  • High breakdown voltage
  • Low VGS(off)
Applications
  • Ignition modules
  • Normally-ON switches
  • Converters
  • Telecommunications
  • Power supplies
Specifications
  • Drain to Source Voltage (Vdss):250V ~ 800V
  • Drive Voltage (Max Rds On, Min Rds On):0V ~ -0.35V
  • FET Feature:Depletion Mode
  • FET Type:N-Channel
  • Input Capacitance (Ciss) (Max) @ Vds:20pF ~ 350pF
  • Mounting Type:Surface Mount
  • Packaging:Tape & Reel (TR)
  • Power Dissipation (Max):400mW (Ta) ~ 2.5W (Ta)
  • Technology:MOSFET (Metal Oxide)
  • Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds:0V ~ 25V
Parts

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CPC3703CTRCPC3703CTRMOSFET N-CH 250V 360MA SOT-89 N-ChannelMOSFET (Metal Oxide)250V360mA (Ta)TO-243AA
CPC3982TTRCPC3982TTRMOSFET N-CH 800V SOT-23 N-ChannelMOSFET (Metal Oxide)800V-TO-236-3, SC-59, SOT-23-3
CPC3960ZTRCPC3960ZTRMOSFET N-CH 600V SOT-223 N-ChannelMOSFET (Metal Oxide)600V-TO-261-4, TO-261AA
CPC5602CTRCPC5602CTRMOSFET N-CH 350V 5MA SOT-223 N-ChannelMOSFET (Metal Oxide)350V5mA (Ta)TO-261-4, TO-261AA
CPC3980ZTRCPC3980ZTRMOSFET N-CH 800V SOT-223 N-ChannelMOSFET (Metal Oxide)800V-TO-261-4, TO-261AA
CPC5603CTRCPC5603CTRMOSFET N-CH 415V 5MA SOT-223 N-ChannelMOSFET (Metal Oxide)415V5mA (Ta)TO-261-4, TO-261AA
CPC3909CTRCPC3909CTRMOSFET N-CH 400V SOT-89 N-ChannelMOSFET (Metal Oxide)400V300mA (Ta)TO-243AA
CPC3902ZTRCPC3902ZTRMOSFET N-CH 250V SOT-223 N-ChannelMOSFET (Metal Oxide)250V-TO-261-4, TO-261AA
CPC3909ZTRCPC3909ZTRMOSFET N-CH 400V SOT-223 N-ChannelMOSFET (Metal Oxide)400V300mA (Ta)TO-261-4, TO-261AA

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