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Microchip Technology
N-Channel Depletion Mode FETs
Advanced Linear Devices Inc.
N-Channel Logic Level Gate FETs
 
Alpha & Omega Semiconductor Inc.
N-Channel Logic Level Gate FETs
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N-Channel Logic Level Gate FETs

Precision N-Channel EPAD® MOSFET Array

Advanced Linear Devices Inc.

Advanced Linear Devices, Inc's precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These dual monolithic devices are enhanced additions to the EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages.

Product Description

Intended for low voltage, low power small signal applications, these MOSFET arrays feature Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a NanoPower input amplifier stage operating at <0.2V supply voltage has been successfully built with these devices.

Features
  • Sub-threshold voltage (nano-power) operation
  • High transconductance and output conductance
  • Low RDS(ON)
  • Matched and tracked tempco
  • Tight lot-to-lot parametric control
  • Positive, zero, and negative VGS(th) tempco
  • Low input capacitance and leakage currents
Applications
  • Low overhead current mirrors and current sources
  • Zero Power Normally-On circuits
  • Energy harvesting circuits
  • Very low voltage analog and digital circuits
  • Zero power fail-safe circuits
  • Backup battery circuits & power failure detector
  • Extremely low level voltage-clamps
  • Extremely low level zero-crossing detector
  • Matched source followers and buffers
  • Precision current mirrors and current sources
  • Matched capacitive probes and sensor interfaces
  • Charge detectors and charge integrators
  • High gain differential amplifier input stage
  • Matched peak-detectors and level-shifters
  • Multiple Channel Sample-and-Hold switches
  • Precision Current multipliers
  • Discrete matched analog switches / multiplexers
  • Nanopower discrete voltage comparators
Specifications
  • Current - Continuous Drain (Id) @ 25°C:80mA
  • Drain to Source Voltage (Vdss):10.6V
  • FET Feature:Logic Level Gate
  • FET Type:2 N-Channel (Dual) Matched Pair ~ 4 N-Channel, Matched Pair
  • Operating Temperature:0°C ~ 70°C (TJ)
  • Power - Max:500mW
  • Rds On (Max) @ Id, Vgs:14Ohm ~ 25Ohm
  • Supplier Device Package:8-PDIP ~ 16-SOIC
Parts

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ALD212900PALALD212900PALMOSFET 2N-CH 10.6V 0.08A 8DIP 2 N-Channel (Dual) Matched PairLogic Level Gate10.6V80mA8-DIP (0.300", 7.62mm)RoHS
ALD212900APALALD212900APALMOSFET 2N-CH 10.6V 0.08A 8DIP 2 N-Channel (Dual) Matched PairLogic Level Gate10.6V80mA8-DIP (0.300", 7.62mm)RoHS
ALD210800SCLALD210800SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC 4 N-Channel, Matched PairLogic Level Gate10.6V80mA16-SOIC (0.154", 3.90mm Width)RoHS
ALD210800ASCLALD210800ASCLMOSFET 4N-CH 10.6V 0.08A 16SOIC 4 N-Channel, Matched PairLogic Level Gate10.6V80mA16-SOIC (0.154", 3.90mm Width)RoHS
ALD210800APCLALD210800APCLMOSFET 4N-CH 10.6V 0.08A 16DIP 4 N-Channel, Matched PairLogic Level Gate10.6V80mA16-DIP (0.300", 7.62mm)RoHS

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