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Everspin Technologies Inc.
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Fujitsu Electronics America, Inc.
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Asynchronous SRAMs
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4M 512K × 8-Bit SPI ReRAM (Resistive Random Access Memory) Chip

Fujitsu Electronics America, Inc.

The MB85AS4MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 524,288 words × 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85AS4MT adopts the Serial Peripheral Interface (SPI). MB85AS4MT is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85AS4MT can be used for 1.2 × 106 rewrite operations.

  • Clock Frequency:5MHz
  • Memory Format:RAM
  • Memory Interface:SPI
  • Memory Size:4Mb (512K x 8)
  • Memory Type:Non-Volatile
  • Mounting Type:Surface Mount
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Package / Case:8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package:8-SOP
  • Technology:ReRAM (Resistive RAM)
  • Voltage - Supply:1.65V ~ 3.6V
  • Write Cycle Time - Word, Page:17ms