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Toshiba Semiconductor and Storage
M/A-Com Technology Solutions
GaN on SiC RF Transistors
GaN on SiC RF Transistors

GaN on SiC RF Transistors

GaN on SiC HEMT Pulsed Power Transistor

M/A-Com Technology Solutions

The MAGX is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies.

  • Common-Source configuration
  • Broadband Class AB operation
  • Civilian and Military Pulsed Radar
  • Current - Test:50mA ~ 350mA
  • Gain:10.5dB ~ 14.8dB
  • Transistor Type:HEMT
  • Voltage - Rated:100V
  • Voltage - Test:28V

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NPTB00004ANPTB00004AHEMT N-CH 28V 5W DC-6GHZ 8SOIC HEMT0Hz ~ 6GHz14.8dB28V8-SOIC (0.154", 3.90mm Width)RoHS
NPT1004DNPT1004DHEMT N-CH 28V 45W DC-4GHZ 8SOIC HEMT0Hz ~ 4GHz13dB28V8-SOIC (0.154", 3.90mm Width) Exposed PadRoHS
NPT35015DNPT35015DHEMT N-CH 28V 18W 3300-3800MHZ HEMT3.3GHz ~ 3.8GHz10.5dB28V8-SOIC (0.154", 3.90mm Width) Exposed PadRoHS
NPT25015DNPT25015DHEMT N-CH 28V 23W DC-3GHZ 8SOIC HEMT0Hz ~ 3GHz14dB28V8-SOIC (0.154", 3.90mm Width) Exposed PadRoHS
NPT1012BNPT1012BHEMT N-CH 28V 25W DC-4000MHZ HEMT0Hz ~ 4GHz13dB28V-RoHS

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