CMPA0060002F High Electron Mobility Transistor
Cree's CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

CRF24010 Demonstration Board
Cree offers a demonstration board for it's CRF24010 silicon carbide (SiC) RF power Metal- Semiconductor Field-Effect Transistors (MESFETs).

RF Power MESFET
Cree's CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.