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Cree Supplier Page
Cree, Inc. - Cree is a market-leading innovator and manufacturer of semiconductors and devices that enhance the value of power, solid-state lighting and communications products by significantly increasing their energy performance and efficiency. In the RF market, Cree offers a few RF FETs and an evaluation kit associated with these FETs.  Learn more about Cree. 

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Cree - Product Information

  • Featured Product
  • Development Tools
  • RF Components
Featured Product

Cree CGH55030F2 High Electron Mobility TransistorCGH55030F2 High Electron Mobility Transistor
Cree’s CGH55030F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/ CGH55030P2 ideal for C-band pulsed or CW saturated amplifiers.

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Development Tools

Cree CMPA0060002F Demonstration BoardCRF24010 Demonstration Board
Cree offers a demonstration board for it's CRF24010 silicon carbide (SiC) RF power Metal- Semiconductor Field-Effect Transistors (MESFETs).

Other Cree demonstration boards include:
CGH40010F-TB - Demo Board Amp Circuit CGH40010
CGH40035F-TB - Demo Board Amp Circuit CGH40035
CGH40045F-TB - Demo Board Amp Circuit CGH40045
CGH40090PP-TB - Demo Board Amp Circuit CGH40090

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RF Components

Cree CMPA2560025F RF Power MESFETRF Power MESFET
Cree's CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

Other Cree RF Components include: 
CGH40006S- Transistor 8W 28V RF HEMT 3x3 QFN 
CGH40090PP - Transistor 90W RF GAN HEMT 440199
CGH40045F - Transistor 45W RF GAN HEMT 440193
CGH40010F - Transistor 10W RF GAN HEMT 440166

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