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Silicon Carbide Diodes      


ROHM silicon carbide Schottky diodes push the performance envelope


ROHM Semiconductor's Silicon Carbide DiodesROHM Semiconductor's SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD) are now available. This new class of SiC diodes offers industry-leading low forward voltage and fast recovery time, leading to improved power conversion efficiency in applications such as PFC/power supplies, solar panel inverters, uninterruptible power supplies, air conditioners and others.

The SCS1xxAGC series maintains low forward voltage over a wide operating temperature range which results in lower power dissipation under actual operating conditions. For example, the 10 A rated part has a VF of 1.5 V at 25°C and 1.6 V at 150°C. Low VF reduces conduction loss while the ultra-short reverse recovery time (15 ns, typical) enables high-speed switching and minimizes switching loss.

With the acquisition of SiCrystal AG, ROHM Semiconductor possesses total manufacturing capability for SiC semiconductors from ingot formation to power device fabrication. This allows the rapid development of advanced products and complete control of raw materials for industry leading reliability and quality.

Digi-Key P/N Manufacturer P/N Description  
SCS106AGC-ND SCS106AGC DIODE SCHOTTKY 600V 6A TO220AC Datasheet
SCS108AGC-ND SCS108AGC DIODE SCHOTTKY 600V 8A TO220AC Datasheet
SCS110AGC-ND SCS110AGC DIODE SCHOTTKY 600V 10A TO220AC Datasheet
SCS112AGC-ND SCS112AGC DIODE SCHOTTKY 600V 12A TO220AC Datasheet
SCS120AGC-ND SCS120AGC DIODE SCHOTTKY 600V 20A TO220AC Datasheet