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N-Channel TrenchFET® Gen III Power MOSFETs


N-Channel TrenchFET® Gen III Power MOSFETs

Vishay and Digi-Key offer one of industry's lowest on-resistances


Vishay has expanded its family of Gen III TrenchFET® power MOSFETs with the release of a new 20-V n-channel device offering the one of the industry’s lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8 package type.

TrenchFET® Gen III power MOSFETs are ideal for low-side applications, where their low on-resistance minimizes conduction losses and improves efficiency compared to previous-generation MOSFETs. Also lower gate charge yields approximately 1/3 lower FOM in some devices, providing lower switching losses over the previous generation.

  • Features
  • SiR440DP
  • SiR866DP
  • SiR890DP
  • Si7192DP

Features & Applications


Features Applications
  • Low conduction and switching losses enable increased efficiency and reduced power consumption
    • Record-breaking maximum on-resistance at VGS = 4.5 V rating is up to 32% - Down to 0.002 Ω
    • Maximum on-resistance at VGS = 10 V is also up to 23% lower - Down to 0.00155 Ω
    • Figure of Merit (FOM) of on-resistance times gate charge up to 42% lower - Down to 87 mΩ-nC
  • 20-V, 25-V, and 30-V options, all with 20 V VGS
  • Package options in SO-8 footprint area include:
    • Thermally advanced PowerPAK® SO-8
    • Standard SO-8
    • PolarPAK® with double-sided cooling
  Circuit Applications
  • Synchronous Rectification
  • Synchronous Buck Converter
    • Low-Side MOSFET
  • OR-ing

  Product Applications
  • VRM
  • POLRoHS Compliant
  • Servers
  • Fixed Telecom
  • Power Supplies

SiR440DP – N-Channel 20-V (D-S) MOSFET


The SiR440DP features a maximum on-resistance of 2.0 mΩ at a 4.5-V gate drive and 1.55 mΩ at a 10-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 87 mΩ-nC at 4.5 V. Compared to the closest competing devices optimized for low conduction losses and low switching losses, these specifications represent an improvement for on-resistance of 23% at 4.5 V and 22.5% at 10 V, and a 27% lower FOM. Lower on-resistance and lower gate charge translate into lower conduction and switching losses respectively.

Features Applications
  • Halogen-free
  • 100% Rg Tested
  • 100% UIS Tested

   Datasheet
  • Fixed Telecom
  • High Current dc-to-dc
  • OR-ingRoHS Compliant
SiR440DP Bottom View

Digi-Key Part Number Vishay/Siliconix Part Number Mounting Type
SIR440DP-T1-GE3CT-ND SIR440DP-T1-GE3 Surface Mount

SiR866DP – N-Channel 20-V (D-S) MOSFET


The SiR866DP offers on-resistance at 4.5 V of 2.5 mΩ, on resistance at 10 V of 1.9 mΩ, with a typical gate charge of 35.3 nC. Offered in the PowerPAK SO-8 package type, the SiR866DP is lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances. Lower on-resistance and lower gate charge translate into lower conduction and switching losses respectively.

Features Applications
  • Halogen-free
  • Low RDS(on)
  • PWM (Qgd and Rg) Optimized
  • 100% Rg Tested
  • 100% UIS Tested

  • Fixed Telecom
  • Low-Side dc-to-dc
  • OR-ing
RoHS Compliant   Datasheet
SiR866DP Bottom View

Digi-Key Part Number Vishay/Siliconix Part Number Mounting Type
SIR866DP-T1-GE3CT-ND SIR866DP-T1-GE3 Surface Mount

SiR890DP – N-Channel 20-V (D-S) MOSFET


The SiR890DP offers on-resistance at 4.5 V of 4 mΩ, on resistance at 10 V of 2.9 mΩ, with a typical gate charge of 20 nC. Offered in the PowerPAK SO-8 package type, the SiR890DP is lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances. Lower on-resistance and lower gate charge translate into lower conduction and switching losses respectively.

Features Applications
  • Halogen-free According to IEC 61249-2-21
  • 100% Rg Tested
  • 100% UIS Tested

   Datasheet
  • Low-Side MOSFET in Synchronous Buck dc-to-dc Converters
    • Game Machine
RoHS Compliant
SiR890DP Bottom View

Digi-Key Part Number Vishay/Siliconix Part Number Mounting Type
SIR890DP-T1-GE3CT-ND SIR890DP-T1-GE3 Surface Mount

Si7192DP – N-Channel 30-V (D-S) MOSFET


The Si7192DP, an n-channel device in the PowerPAK® SO-8 package, features maximum on-resistance of 2.25 mΩ at a 4.5-V gate drive voltage. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98 mΩ-nC, a new industry record for any VDS = 30V, VGS = 20 V device in an SO-8 footprint. Compared to the closest competing devices optimized for low conduction losses and low switching losses respectively, these represent some of the best available specifications on the market. Lower on-resistance and lower gate charge translate into lower conduction and switching losses respectively.

Features Applications
  • Halogen-free
  • 100% Rg Tested
  • 100% Avalanche Tested

   Datasheet
  • VRM, POL, Server
  • High current DC/DC
    • Low-Side
RoHS Compliant
Si7192DP Bottom View

Digi-Key Part Number Vishay/Siliconix Part Number Mounting Type
SI7192DP-T1-GE3CT-ND SI7192DP-T1-GE3 Surface Mount