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Vishay's high-voltage power MOSFETs combine low on-resistance and gate charge

Vishay's SiHP18N50C and SiHG20N50C N-channel power MOSFETs combine a 500V rating with low 0.270Ω maximum on-resistance at a 10V gate drive. This low RDS(on) translates into lower conduction losses that save energy in power factor correction (PFC) and pulse width modulation (PWM) applications in a wide range of electronic systems, including LCD TVs, PCs, servers, telecom systems, and welding machines. SiHP18N50C/SiHG20N50C MOSFETs

  • Low figure of merit
  • 100% avalanche tested
  • High peak current capability
  • dV/dt ruggedness
  • Improved gate charge
  • High power dissipations capability
  • Improved trr/Qrr
RoHS Compliant

RDS(on) 270mΩ @ 10A, 10V Voltage 500V
VGS ±30V Qg 76nC @ 10V
Id 18A (SiHP), 20A (SiHG) Ciss 2942pF @ 25V
Maximum Power 223W (SiHP), 292W (SiHG) Mounting Type Through Hole

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Digi-Key P/N Manufacturer's P/N Package Description
SIHP18N50C-E3-ND SIHP18N50C-E3 TO-220 MOSFET N-CH 500V 18A TO220 Datasheet
SIHG20N50C-E3-ND SIHG20N50C-E3 TO-247 MOSFET N-CH 500V 20A TO247 Datasheet