Vishay/Siliconix Supplier Page

PolarPAK® Power MOSFETs


N-Channel 20-V to 40-V PolarPAK® Power MOSFETs

Vishay and Digi-Key offer thermal benefits of double-sided
cooling package with on-resistance down to 1.4 mΩ


Vishay's n-channel 20-V, 30-V, and 40-V devices in the PolarPAK® family of power MOSFETs with double-sided cooling, give designers a new way to reduce system size and cost through better MOSFET thermal performance.

Aimed at synchronous rectification, point-of-load converters, and OR-ing applications in telecom and data communications systems, the newly added Vishay Siliconix PolarPAK devices deliver up to 48% better on-resistance and 12% better on-resistance-times-gate-charge performance than the next-best devices on the market with double-sided cooling.

These improved specifications translate into lower conduction and switching losses that reduce power consumption in end systems. The dual heat dissipation paths provided by PolarPAK’s double-sided cooling construction allow high current densities in systems with forced air cooling, enabling more compact designs and/or the ability to reduce the number of paralleled MOSFETs. To the extent that paralleling is needed at all, PolarPAK simplifies such designs with its straightforward pin-out, minimizing inductance from board layouts, and thus improving efficiency, especially at higher frequencies.

  • SiE806DF
  • SiE808DF
  • SiE810DF
  • SiE812DF
  • SiE830DF
  • SiE832DF

SiE806DF – N-Channel 30-V (D-S) MOSFET

Features Applications
  • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling
  • Leadframe-Based New Encapsulated Package
    • Die Not Exposed
    • Same Layout Regardless of Die Size
  • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
  • 100% Rg and UIS Tested
  • VRM
  • DC/DC Conversion: Low-Side
  • Synchronous Rectification

   DatasheetRoHS Compliant
SiE806DF PolarPAK

Vishay/Siliconix Part Number Digi-Key Part Number Packaging Type rDS(on) On (Max) at Id, Vgs
SIE806DF-T1-E3 SIE806DF-T1-E3CT-ND Cut Tape 1.7 mΩ at 25 A, 10 V
SIE806DF-T1-E3TR-ND Tape & Reel

SiE808DF – N-Channel 20-V (D-S) MOSFET

Features Applications
  • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling
  • Leadframe-Based New Encapsulated Package
    • Die Not Exposed
    • Same Layout Regardless of Die Size
  • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
  • 100% Rg and UIS Tested
  • VRM
  • DC/DC Conversion: Low-Side
  • Synchronous Rectification

   DatasheetRoHS Compliant
SiE808DF PolarPAK

Vishay/Siliconix Part Number Digi-Key Part Number Packaging Type rDS(on) On (Max) at Id, Vgs
SIE808DF-T1-E3 SIE808DF-T1-E3CT-ND Cut Tape 1.6 mΩ at 25 A, 10 V
SIE808DF-T1-E3TR-ND Tape & Reel

SiE810DF – N-Channel 20-V (D-S) MOSFET

Features Applications
  • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling
  • Leadframe-Based New Encapsulated Package
    • Die Not Exposed
    • Same Layout Regardless of Die Size
  • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
  • 100% Rg and UIS Tested
  • VRM
  • DC/DC Conversion: Low-Side
  • Synchronous Rectification

   DatasheetRoHS Compliant
SiE810DF PolarPAK

Vishay/Siliconix Part Number Digi-Key Part Number Packaging Type rDS(on) On (Max) at Id, Vgs
SIE810DF-T1-E3 SIE810DF-T1-E3CT-ND Cut Tape 1.4 mΩ at 25 A, 10 V
SIE810DF-T1-E3TR-ND Tape & Reel

SiE812DF – N-Channel 40-V (D-S) MOSFET

Features Applications
  • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling
  • Leadframe-Based New Encapsulated Package
    • Die Not Exposed
    • Same Layout Regardless of Die Size
  • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
  • 100% Rg and UIS Tested
  • VRM
  • DC/DC Conversion: Low-Side
  • Synchronous Rectification

   Datasheet RoHS Compliant
SiE812DF PolarPAK

Vishay/Siliconix Part Number Digi-Key Part Number Packaging Type rDS(on) On (Max) at Id, Vgs
SIE812DF-T1-E3 SIE812DF-T1-E3CT-ND Cut Tape 2.6 mΩ at 25 A, 10 V
SIE812DF-T1-E3TR-ND Tape & Reel

SiE830DF – N-Channel 30-V (D-S) MOSFET

Features Applications
  • Extremely Low Qgd WFET® Technology for Low Switching Losses
  • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling
  • Leadframe-Based New Encapsulated Package
    • Die Not Exposed
    • Same Layout Regardless of Die Size
  • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
  • 100% Rg and UIS Tested
  • VRM
  • Point-of-Load
  • Synchronous Rectification

   Datasheet RoHS Compliant
SiE830DF PolarPAK

Vishay/Siliconix Part Number Digi-Key Part Number Packaging Type rDS(on) On (Max) at Id, Vgs
SIE830DF-T1-E3 SIE830DF-T1-E3TR-ND Tape & Reel 4.2 mΩ at 16 A, 10 V

SiE832DF – N-Channel 40-V (D-S) MOSFET

Features Applications
  • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling
  • Leadframe-Based New Encapsulated Package
    • Die Not Exposed
    • Same Layout Regardless of Die Size
  • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
  • 100% Rg and UIS Tested
  • VRM
  • Point-of-Load
  • Synchronous Rectification

   Datasheet RoHS Compliant
SiE832DF PolarPAK

Vishay/Siliconix Part Number Digi-Key Part Number Packaging Type rDS(on) On (Max) at Id, Vgs
SIE832DF-T1-E3 SIE832DF-T1-E3TR-ND Tape & Reel 5.5 mΩ at 14 A, 10 V