Vishay and Digi-Key help designers simplify power management circuitry while extending battery run times in portable electronics
The 1.2-V-rated Vishay Siliconix TrenchFET® devices bring the MOSFET turn-on voltage into alignment with the 1.2-V to 1.3-V operating voltages of digital ICs used in mobile electronics, enabling safer and more reliable designs. As the first power MOSFETs that can be driven directly from 1.2-V buses, the new TrenchFETs provide the additional potential benefit of eliminating the need for an extra conversion stage in battery-operated systems with a core voltage lower than 1.8 V.
In MOSFETs where 1.5 V is the lowest rating, on-resistance tends to increase exponentially at lower, unspecified gate-to-source voltages such as 1.2 V. By contrast, these new 1.2-V TrenchFETs offer guaranteed low n-channel on-resistance as low as 0.041 Ω and p-channel on-resistance as low as 0.095 Ω at a 1.2-V gate drive. On-resistance performance at a 1.5-V gate drive is better than in devices for which 1.5 V is the lowest gate-to-source specification: as low as 0.022 (n-channel) and 0.058 (p-channel).