Freescale Semiconductors, Inc. Supplier Page

MRFE6S9060NR1 MOSFET


Freescale's Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET


Freescale - MRFE6S9060NR1Freescale Semiconductor's MRFE6S9060NR1 is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large signal and common source amplifier applications in 28V base station equipment.
Features
  • Typical single-carrier N–CDMA performance @ 880 MHz, VDD = 28 V, IDQ = 450 mA, Pout = 14W avg., IS–95 CDMA (pilot, sync, paging, traffic codes 8 through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% probability on CCDF
    • Power gain: 21.1 dB
    • Drain efficiency: 33%
    • ACPR @ 750 kHz offset:-45.7 dBc in 30 kHz bandwidth
  • Capable of handling 10:1 VSWR, @ 32 VDC, 880 MHz, 3 dB overdrive, designed for enhanced ruggedness

GSM EDGE Application
  • Typical GSM EDGE performance: VDD = 28 V, IDQ = 500 mA, Pout = 21 W avg., full frequency band (920 to 960 MHz)
  • Spectral regrowth @ 400 kHz Offset =-62 dBc
  • Spectral regrowth @ 600 kHz Offset =-78 dBc
  • Power gain: 20 dB
  • Drain efficiency: 46%
  • EVM: 1.5% rms

GSM Application
  • Typical GSM performance: VDD = 28 V, IDQ = 500 mA,
    Pout = 60 W, full frequency band (920 to 960 MHz)
  • Characterized with series equivalent large–signal impedance parameters
  • Integrated ESD protection
  • 225°C capable plastic package
  • Power gain: 20 dBRoHS Compliant
  • Drain efficiency: 63%
  • RoHS compliant

Digi-Key P/N Freescale P/N Description Frequency Datasheet
MRFE6S9060NR1TR-ND MRFE6S9060NR1 MOSFET RF N-CH 14W TO-270-2 880MHz Datasheet
Available in Tape & Reel (TR-ND), Cut Tape (CT-ND), and custom Digi-Reel® (DKR-ND)