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2N7000-G N-Channel 60V 200mA (Tj) 1W (Tc) Through Hole TO-92-3
Price & Procurement
2,229 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 0.37000 $0.37
25 0.31000 $7.75
100 0.28000 $28.00

Submit a request for quotation on quantities greater than those displayed.

2N7000-G

Datasheet
Digi-Key Part Number 2N7000-G-ND
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Manufacturer

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Manufacturer Part Number 2N7000-G
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Description MOSFET N-CH 60V 0.2A TO92-3
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Manufacturer Standard Lead Time 6 Weeks
Detailed Description

N-Channel 60V 200mA (Tj) 1W (Tc) Through Hole TO-92-3

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Documents & Media
Datasheets 2N7000
PCN Assembly/Origin Supertex 03/Aug/2016
PCN Packaging Label and Packing Changes 23/Sep/2015
EDA / CAD Models Download from Ultra Librarian
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
Type Description Select All
Categories
Manufacturer Microchip Technology
Series -
Packaging Bulk 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
FET Feature -
Power Dissipation (Max) 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1,000