Product Index > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) FET Feature Power Dissipation (Max) Rds On (Max) @ Id, Vgs Operating Temperature Mounting Type Supplier Device Package Package / Case
   
EPC2001 Datasheet EPC2001 - EPC 917-1014-2-ND TRANS GAN 100V 25A BUMPED DIE 15,000 - Immediate
3.61880 500 Tape & Reel (TR)?
Alternate Packaging
eGaN® Active N-Channel GaNFET (Gallium Nitride) 100V 25A (Ta) 5V 2.5V @ 5mA 10nC @ 5V 950pF @ 50V +6V, -5V
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7 mOhm @ 25A, 5V -40°C ~ 125°C (TJ) Surface Mount Die Outline (11-Solder Bar) Die
EPC2001 Datasheet EPC2001 - EPC 917-1014-1-ND TRANS GAN 100V 25A BUMPED DIE 15,496 - Immediate
6.29000 1 Cut Tape (CT)?
Alternate Packaging
eGaN® Active N-Channel GaNFET (Gallium Nitride) 100V 25A (Ta) 5V 2.5V @ 5mA 10nC @ 5V 950pF @ 50V +6V, -5V
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7 mOhm @ 25A, 5V -40°C ~ 125°C (TJ) Surface Mount Die Outline (11-Solder Bar) Die
EPC2001 Datasheet EPC2001 - EPC 917-1014-6-ND TRANS GAN 100V 25A BUMPED DIE 15,496 - Immediate
Digi-Reel® 1 Digi-Reel®? eGaN® Active N-Channel GaNFET (Gallium Nitride) 100V 25A (Ta) 5V 2.5V @ 5mA 10nC @ 5V 950pF @ 50V +6V, -5V
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7 mOhm @ 25A, 5V -40°C ~ 125°C (TJ) Surface Mount Die Outline (11-Solder Bar) Die
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16:07:14 1/17/2017