Product Index > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) FET Feature Power Dissipation (Max) Rds On (Max) @ Id, Vgs Operating Temperature Mounting Type Supplier Device Package Package / Case
   
SISS23DN-T1-GE3 Datasheet SISS23DN-T1-GE3 - Vishay Siliconix SISS23DN-T1-GE3TR-ND MOSFET P-CH 20V 50A PPAK 1212-8S 3,000 - Immediate
0.31712 3,000 Tape & Reel (TR)?
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20V 50A (Tc) 1.8V, 4.5V 900mV @ 250µA 300nC @ 10V 8840pF @ 15V ±8V
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4.8W (Ta), 57W (Tc) 4.5 mOhm @ 20A, 4.5V -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S 8-VDFN Exposed Pad
SISS23DN-T1-GE3 Datasheet SISS23DN-T1-GE3 - Vishay Siliconix SISS23DN-T1-GE3CT-ND MOSFET P-CH 20V 50A PPAK 1212-8S 5,818 - Immediate
0.84000 1 Cut Tape (CT)?
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20V 50A (Tc) 1.8V, 4.5V 900mV @ 250µA 300nC @ 10V 8840pF @ 15V ±8V
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4.8W (Ta), 57W (Tc) 4.5 mOhm @ 20A, 4.5V -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S 8-VDFN Exposed Pad
SISS23DN-T1-GE3 Datasheet SISS23DN-T1-GE3 - Vishay Siliconix SISS23DN-T1-GE3DKR-ND MOSFET P-CH 20V 50A PPAK 1212-8S 5,818 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20V 50A (Tc) 1.8V, 4.5V 900mV @ 250µA 300nC @ 10V 8840pF @ 15V ±8V
-
4.8W (Ta), 57W (Tc) 4.5 mOhm @ 20A, 4.5V -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S 8-VDFN Exposed Pad
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19:55:29 1/23/2017