Product Index > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) FET Feature Power Dissipation (Max) Rds On (Max) @ Id, Vgs Operating Temperature Mounting Type Supplier Device Package Package / Case
   
SI5415AEDU-T1-GE3 Datasheet SI5415AEDU-T1-GE3 - Vishay Siliconix SI5415AEDU-T1-GE3TR-ND MOSFET P-CH 20V 25A CHIPFET 0
Standard Lead Time 17 Weeks
0.23200 3,000 Tape & Reel (TR)?
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20V 25A (Tc) 1.8V, 4.5V 1V @ 250µA 120nC @ 8V 4300pF @ 10V ±8V
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3.1W (Ta), 31W (Tc) 9.6 mOhm @ 10A, 4.5V -50°C ~ 150°C (TJ) Surface Mount PowerPAK® ChipFet Single PowerPAK® ChipFET™ Single
SI5415AEDU-T1-GE3 Datasheet SI5415AEDU-T1-GE3 - Vishay Siliconix SI5415AEDU-T1-GE3CT-ND MOSFET P-CH 20V 25A CHIPFET 0
Standard Lead Time 17 Weeks
0.62000 1 Cut Tape (CT)?
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20V 25A (Tc) 1.8V, 4.5V 1V @ 250µA 120nC @ 8V 4300pF @ 10V ±8V
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3.1W (Ta), 31W (Tc) 9.6 mOhm @ 10A, 4.5V -50°C ~ 150°C (TJ) Surface Mount PowerPAK® ChipFet Single PowerPAK® ChipFET™ Single
SI5415AEDU-T1-GE3 Datasheet SI5415AEDU-T1-GE3 - Vishay Siliconix SI5415AEDU-T1-GE3DKR-ND MOSFET P-CH 20V 25A CHIPFET 0
Standard Lead Time 17 Weeks
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20V 25A (Tc) 1.8V, 4.5V 1V @ 250µA 120nC @ 8V 4300pF @ 10V ±8V
-
3.1W (Ta), 31W (Tc) 9.6 mOhm @ 10A, 4.5V -50°C ~ 150°C (TJ) Surface Mount PowerPAK® ChipFet Single PowerPAK® ChipFET™ Single
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17:30:49 1/22/2017