Product Index > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) FET Feature Power Dissipation (Max) Rds On (Max) @ Id, Vgs Operating Temperature Mounting Type Supplier Device Package Package / Case
   
PSMN3R0-30YLDX Datasheet PSMN3R0-30YLDX - NXP USA Inc. 568-11379-2-ND MOSFET N-CH 30V 100A LFPAK 1,500 - Immediate
0.28800 1,500 Tape & Reel (TR)?
Alternate Packaging
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Active N-Channel MOSFET (Metal Oxide) 30V 100A (Tc) 4.5V, 10V 2.2V @ 1mA 46.4nC @ 10V 2939pF @ 15V ±20V
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91W (Tc) 3.1 mOhm @ 25A, 10V -55°C ~ 175°C (TJ) Surface Mount LFPAK, Power-SO8 SC-100, SOT-669
PSMN3R0-30YLDX Datasheet PSMN3R0-30YLDX - NXP USA Inc. 568-11379-1-ND MOSFET N-CH 30V 100A LFPAK 1,513 - Immediate
0.70000 1 Cut Tape (CT)?
Alternate Packaging
-
Active N-Channel MOSFET (Metal Oxide) 30V 100A (Tc) 4.5V, 10V 2.2V @ 1mA 46.4nC @ 10V 2939pF @ 15V ±20V
-
91W (Tc) 3.1 mOhm @ 25A, 10V -55°C ~ 175°C (TJ) Surface Mount LFPAK, Power-SO8 SC-100, SOT-669
PSMN3R0-30YLDX Datasheet PSMN3R0-30YLDX - NXP USA Inc. 568-11379-6-ND MOSFET N-CH 30V 100A LFPAK 1,513 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
-
Active N-Channel MOSFET (Metal Oxide) 30V 100A (Tc) 4.5V, 10V 2.2V @ 1mA 46.4nC @ 10V 2939pF @ 15V ±20V
-
91W (Tc) 3.1 mOhm @ 25A, 10V -55°C ~ 175°C (TJ) Surface Mount LFPAK, Power-SO8 SC-100, SOT-669
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09:16:04 1/23/2017