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IPT059N15N3
 
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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) FET Feature Power Dissipation (Max) Rds On (Max) @ Id, Vgs Operating Temperature Mounting Type Supplier Device Package Package / Case
   
IPT059N15N3ATMA1 Datasheet IPT059N15N3ATMA1 - Infineon Technologies IPT059N15N3ATMA1TR-ND MOSFET N-CH 150V 155A 8HSOF 2,000 - Immediate
3.35062 2,000 Tape & Reel (TR)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150V 155A (Tc) 8V, 10V 4V @ 270µA 92nC @ 10V 7200pF @ 75V ±20V
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375W (Tc) 5.9 mOhm @ 150A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-HSOF-8-1 8-PowerSFN
IPT059N15N3ATMA1 Datasheet IPT059N15N3ATMA1 - Infineon Technologies IPT059N15N3ATMA1CT-ND MOSFET N-CH 150V 155A 8HSOF 3,771 - Immediate
6.32000 1 Cut Tape (CT)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150V 155A (Tc) 8V, 10V 4V @ 270µA 92nC @ 10V 7200pF @ 75V ±20V
-
375W (Tc) 5.9 mOhm @ 150A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-HSOF-8-1 8-PowerSFN
IPT059N15N3ATMA1 Datasheet IPT059N15N3ATMA1 - Infineon Technologies IPT059N15N3ATMA1DKR-ND MOSFET N-CH 150V 155A 8HSOF 3,771 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150V 155A (Tc) 8V, 10V 4V @ 270µA 92nC @ 10V 7200pF @ 75V ±20V
-
375W (Tc) 5.9 mOhm @ 150A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-HSOF-8-1 8-PowerSFN
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01:14:11 1/22/2017