Product Index > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

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IPT020N10N3
 
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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) FET Feature Power Dissipation (Max) Rds On (Max) @ Id, Vgs Operating Temperature Mounting Type Supplier Device Package Package / Case
   
IPT020N10N3ATMA1 Datasheet IPT020N10N3ATMA1 - Infineon Technologies IPT020N10N3ATMA1TR-ND MOSFET N-CH 100V 300A 8HSOF 6,000 - Immediate
3.26885 2,000 Tape & Reel (TR)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 300A (Tc) 6V, 10V 3.5V @ 272µA 156nC @ 10V 11200pF @ 50V ±20V
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375W (Tc) 2 mOhm @ 150A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-HSOF-8-1 8-PowerSFN
IPT020N10N3ATMA1 Datasheet IPT020N10N3ATMA1 - Infineon Technologies IPT020N10N3ATMA1CT-ND MOSFET N-CH 100V 300A 8HSOF 6,827 - Immediate
6.16000 1 Cut Tape (CT)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 300A (Tc) 6V, 10V 3.5V @ 272µA 156nC @ 10V 11200pF @ 50V ±20V
-
375W (Tc) 2 mOhm @ 150A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-HSOF-8-1 8-PowerSFN
IPT020N10N3ATMA1 Datasheet IPT020N10N3ATMA1 - Infineon Technologies IPT020N10N3ATMA1DKR-ND MOSFET N-CH 100V 300A 8HSOF 6,827 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 300A (Tc) 6V, 10V 3.5V @ 272µA 156nC @ 10V 11200pF @ 50V ±20V
-
375W (Tc) 2 mOhm @ 150A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-HSOF-8-1 8-PowerSFN
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13:25:10 1/22/2017