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IPP030N10N3 G
 
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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) FET Feature Power Dissipation (Max) Rds On (Max) @ Id, Vgs Operating Temperature Mounting Type Supplier Device Package Package / Case
   
IPP030N10N3GXKSA1 Datasheet IPP030N10N3GXKSA1 - Infineon Technologies IPP030N10N3GXKSA1-ND MOSFET N-CH 100V 100A TO220-3 508 - Immediate
4.94000 1 Tube? OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 100A (Tc) 6V, 10V 3.5V @ 275µA 206nC @ 10V 14800pF @ 50V ±20V
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300W (Tc) 3 mOhm @ 100A, 10V -55°C ~ 175°C (TJ) Through Hole PG-TO-220-3 TO-220-3
IPP030N10N3GHKSA1 Datasheet IPP030N10N3GHKSA1 - Infineon Technologies IPP030N10N3GHKSA1-ND MOSFET N-CH 100V 100A TO220-3 0
Obsolete
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Tube? OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100V 100A (Tc)
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3.5V @ 275µA 206nC @ 10V 14800pF @ 50V
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300W (Tc) 3 mOhm @ 100A, 10V -55°C ~ 175°C (TJ) Through Hole PG-TO-220-3 TO-220-3
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14:59:32 1/24/2017