Product Index > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

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IPB026N06N
 
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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) FET Feature Power Dissipation (Max) Rds On (Max) @ Id, Vgs Operating Temperature Mounting Type Supplier Device Package Package / Case
   
IPB026N06N Datasheet IPB026N06N - Infineon Technologies IPB026N06NTR-ND MOSFET N-CH 60V 25A TO263-3 0
Standard Lead Time 12 Weeks
0.98600 1,000 Tape & Reel (TR)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60V 25A (Ta), 100A (Tc) 6V, 10V 2.8V @ 75µA 56nC @ 10V 4100pF @ 30V ±20V
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3W (Ta), 136W (Tc) 2.6 mOhm @ 100A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB026N06N Datasheet IPB026N06N - Infineon Technologies IPB026N06NCT-ND MOSFET N-CH 60V 25A TO263-3 675 - Immediate
2.07000 1 Cut Tape (CT)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60V 25A (Ta), 100A (Tc) 6V, 10V 2.8V @ 75µA 56nC @ 10V 4100pF @ 30V ±20V
-
3W (Ta), 136W (Tc) 2.6 mOhm @ 100A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB026N06N Datasheet IPB026N06N - Infineon Technologies IPB026N06NDKR-ND MOSFET N-CH 60V 25A TO263-3 675 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60V 25A (Ta), 100A (Tc) 6V, 10V 2.8V @ 75µA 56nC @ 10V 4100pF @ 30V ±20V
-
3W (Ta), 136W (Tc) 2.6 mOhm @ 100A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-TO263-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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18:49:55 1/20/2017