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IPB025N10N3 G
 
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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) FET Feature Power Dissipation (Max) Rds On (Max) @ Id, Vgs Operating Temperature Mounting Type Supplier Device Package Package / Case
   
IPB025N10N3 G Datasheet IPB025N10N3 G - Infineon Technologies IPB025N10N3 GTR-ND MOSFET N-CH 100V 180A TO263-7 10,000 - Immediate
2.74820 1,000 Tape & Reel (TR)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 180A (Tc) 6V, 10V 3.5V @ 275µA 206nC @ 10V 14800pF @ 50V ±20V
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300W (Tc) 2.5 mOhm @ 100A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-TO263-7 TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IPB025N10N3 G Datasheet IPB025N10N3 G - Infineon Technologies IPB025N10N3 GCT-ND MOSFET N-CH 100V 180A TO263-7 10,182 - Immediate
5.36000 1 Cut Tape (CT)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 180A (Tc) 6V, 10V 3.5V @ 275µA 206nC @ 10V 14800pF @ 50V ±20V
-
300W (Tc) 2.5 mOhm @ 100A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-TO263-7 TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IPB025N10N3 G Datasheet IPB025N10N3 G - Infineon Technologies IPB025N10N3 GDKR-ND MOSFET N-CH 100V 180A TO263-7 10,182 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100V 180A (Tc) 6V, 10V 3.5V @ 275µA 206nC @ 10V 14800pF @ 50V ±20V
-
300W (Tc) 2.5 mOhm @ 100A, 10V -55°C ~ 175°C (TJ) Surface Mount PG-TO263-7 TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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12:09:04 1/16/2017