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BSC014N06NS
 
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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Vgs (Max) FET Feature Power Dissipation (Max) Rds On (Max) @ Id, Vgs Operating Temperature Mounting Type Supplier Device Package Package / Case
   
BSC014N06NS Datasheet BSC014N06NS - Infineon Technologies BSC014N06NSTR-ND MOSFET N-CH 60V 30A TDSON-8 20,000 - Immediate
1.33107 5,000 Tape & Reel (TR)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60V 30A (Ta), 100A (Tc) 6V, 10V 2.8V @ 120µA 89nC @ 10V 6500pF @ 30V ±20V
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2.5W (Ta), 156W (Tc) 1.45 mOhm @ 50A, 10V -55°C ~ 150°C (TJ) Surface Mount PG-TDSON-8 8-PowerTDFN
BSC014N06NS Datasheet BSC014N06NS - Infineon Technologies BSC014N06NSCT-ND MOSFET N-CH 60V 30A TDSON-8 22,185 - Immediate
2.84000 1 Cut Tape (CT)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60V 30A (Ta), 100A (Tc) 6V, 10V 2.8V @ 120µA 89nC @ 10V 6500pF @ 30V ±20V
-
2.5W (Ta), 156W (Tc) 1.45 mOhm @ 50A, 10V -55°C ~ 150°C (TJ) Surface Mount PG-TDSON-8 8-PowerTDFN
BSC014N06NS Datasheet BSC014N06NS - Infineon Technologies BSC014N06NSDKR-ND MOSFET N-CH 60V 30A TDSON-8 22,185 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60V 30A (Ta), 100A (Tc) 6V, 10V 2.8V @ 120µA 89nC @ 10V 6500pF @ 30V ±20V
-
2.5W (Ta), 156W (Tc) 1.45 mOhm @ 50A, 10V -55°C ~ 150°C (TJ) Surface Mount PG-TDSON-8 8-PowerTDFN
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18:52:29 1/16/2017