Product Index  >  Discrete Semiconductor Products  >  Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Package / Case Supplier Device Package
   
SISS23DN-T1-GE3 Datasheet SISS23DN-T1-GE3 - Vishay Siliconix SISS23DN-T1-GE3TR-ND MOSFET P-CH 20V 50A PPAK 1212-8S 0
Standard Lead Time 15 Weeks
0.31712 3,000 Tape & Reel (TR)?
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20V 50A (Tc)
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4.5 mOhm @ 20A, 4.5V 900mV @ 250µA 300nC @ 10V 8840pF @ 15V
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-50°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad PowerPAK® 1212-8S
SISS23DN-T1-GE3 Datasheet SISS23DN-T1-GE3 - Vishay Siliconix SISS23DN-T1-GE3CT-ND MOSFET P-CH 20V 50A PPAK 1212-8S 0
Standard Lead Time 15 Weeks
0.84000 1 Cut Tape (CT)?
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20V 50A (Tc)
*
4.5 mOhm @ 20A, 4.5V 900mV @ 250µA 300nC @ 10V 8840pF @ 15V
-
*
-50°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad PowerPAK® 1212-8S
SISS23DN-T1-GE3 Datasheet SISS23DN-T1-GE3 - Vishay Siliconix SISS23DN-T1-GE3DKR-ND MOSFET P-CH 20V 50A PPAK 1212-8S 0
Standard Lead Time 15 Weeks
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20V 50A (Tc)
*
4.5 mOhm @ 20A, 4.5V 900mV @ 250µA 300nC @ 10V 8840pF @ 15V
-
*
-50°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad PowerPAK® 1212-8S
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12:37:04 12/10/2016