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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Package / Case Supplier Device Package
   
PSMN4R2-30MLDX Datasheet PSMN4R2-30MLDX - NXP USA Inc. 568-11376-2-ND MOSFET N-CH 30V 70A LFPAK33 0
0.22100 1,500 Tape & Reel (TR)?
Alternate Packaging
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Active N-Channel MOSFET (Metal Oxide) 30V 70A (Tc)
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4.3 mOhm @ 25A, 10V 2.2V @ 1mA 29.3nC @ 10V 1795pF 15V Schottky Diode (Body)
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-55°C ~ 175°C (TJ) Surface Mount SOT-1210, 8-LFPAK33 (5-Lead) LFPAK33
PSMN4R2-30MLDX Datasheet PSMN4R2-30MLDX - NXP USA Inc. 568-11376-1-ND MOSFET N-CH 30V 70A LFPAK33 480 - Immediate
0.59000 1 Cut Tape (CT)?
Alternate Packaging
-
Active N-Channel MOSFET (Metal Oxide) 30V 70A (Tc)
*
4.3 mOhm @ 25A, 10V 2.2V @ 1mA 29.3nC @ 10V 1795pF 15V Schottky Diode (Body)
*
-55°C ~ 175°C (TJ) Surface Mount SOT-1210, 8-LFPAK33 (5-Lead) LFPAK33
PSMN4R2-30MLDX Datasheet PSMN4R2-30MLDX - NXP USA Inc. 568-11376-6-ND MOSFET N-CH 30V 70A LFPAK33 480 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
-
Active N-Channel MOSFET (Metal Oxide) 30V 70A (Tc)
*
4.3 mOhm @ 25A, 10V 2.2V @ 1mA 29.3nC @ 10V 1795pF 15V Schottky Diode (Body)
*
-55°C ~ 175°C (TJ) Surface Mount SOT-1210, 8-LFPAK33 (5-Lead) LFPAK33
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08:10:12 12/11/2016