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IPP045N10N3 G
 
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Packaging Series Part Status FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Operating Temperature Mounting Type Package / Case Supplier Device Package
   
IPP045N10N3GXKSA1 Datasheet IPP045N10N3GXKSA1 - Infineon Technologies IPP045N10N3GXKSA1-ND MOSFET N-CH 100V 100A TO220-3 5,139 - Immediate
2.04000 1 Tube? OptiMOS™ Active MOSFET N-Channel, Metal Oxide Standard 100V 100A (Tc) 4.5 mOhm @ 100A, 10V 3.5V @ 150µA 117nC @ 10V 8410pF @ 50V 214W -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3
IPP045N10N3GHKSA1 Datasheet IPP045N10N3GHKSA1 - Infineon Technologies IPP045N10N3GHKSA1-ND MOSFET N-CH 100V 100A TO220-3 0
Obsolete
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Tube? OptiMOS™ Obsolete MOSFET N-Channel, Metal Oxide Standard 100V 100A (Tc) 4.5 mOhm @ 100A, 10V 3.5V @ 150µA 117nC @ 10V 8410pF @ 50V 214W -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3
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01:41:56 12/8/2016