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IPB027N10N3 G
 
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Packaging Series FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Operating Temperature Mounting Type Package / Case Supplier Device Package
   
IPB027N10N3GATMA1 Datasheet IPB027N10N3GATMA1 - Infineon Technologies IPB027N10N3GATMA1TR-ND MOSFET N-CH 100V 120A TO263-3 9,000 - Immediate
2.57264 1,000 Tape & Reel (TR)?
Alternate Packaging
OptiMOS™ MOSFET N-Channel, Metal Oxide Standard 100V 120A (Tc) 2.7 mOhm @ 100A, 10V 3.5V @ 275µA 206nC @ 10V 14800pF @ 50V 300W -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-2
IPB027N10N3GATMA1 Datasheet IPB027N10N3GATMA1 - Infineon Technologies IPB027N10N3GATMA1CT-ND MOSFET N-CH 100V 120A TO263-3 9,762 - Immediate
5.02000 1 Cut Tape (CT)?
Alternate Packaging
OptiMOS™ MOSFET N-Channel, Metal Oxide Standard 100V 120A (Tc) 2.7 mOhm @ 100A, 10V 3.5V @ 275µA 206nC @ 10V 14800pF @ 50V 300W -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-2
IPB027N10N3GATMA1 Datasheet IPB027N10N3GATMA1 - Infineon Technologies IPB027N10N3GATMA1DKR-ND MOSFET N-CH 100V 120A TO263-3 9,762 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
OptiMOS™ MOSFET N-Channel, Metal Oxide Standard 100V 120A (Tc) 2.7 mOhm @ 100A, 10V 3.5V @ 275µA 206nC @ 10V 14800pF @ 50V 300W -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-2
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09:51:35 7/28/2016