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IPB026N06N
 
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Packaging Series FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Operating Temperature Mounting Type Package / Case Supplier Device Package
   
IPB026N06N Datasheet IPB026N06N - Infineon Technologies IPB026N06NTR-ND MOSFET N-CH 60V 25A TO263-3 0
Standard Lead Time 14 Weeks
0.98600 1,000 Tape & Reel (TR)?
Alternate Packaging
OptiMOS™ MOSFET N-Channel, Metal Oxide Standard 60V 25A (Ta), 100A (Tc) 2.6 mOhm @ 100A, 10V 2.8V @ 75µA 56nC @ 10V 4100pF @ 30V 3W -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3
IPB026N06N Datasheet IPB026N06N - Infineon Technologies IPB026N06NCT-ND MOSFET N-CH 60V 25A TO263-3 0
Standard Lead Time 16 Weeks
2.07000 1 Cut Tape (CT)?
Alternate Packaging
OptiMOS™ MOSFET N-Channel, Metal Oxide Standard 60V 25A (Ta), 100A (Tc) 2.6 mOhm @ 100A, 10V 2.8V @ 75µA 56nC @ 10V 4100pF @ 30V 3W -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3
IPB026N06N Datasheet IPB026N06N - Infineon Technologies IPB026N06NDKR-ND MOSFET N-CH 60V 25A TO263-3 0
Standard Lead Time 16 Weeks
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
OptiMOS™ MOSFET N-Channel, Metal Oxide Standard 60V 25A (Ta), 100A (Tc) 2.6 mOhm @ 100A, 10V 2.8V @ 75µA 56nC @ 10V 4100pF @ 30V 3W -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3
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14:23:29 7/23/2016