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IPB025N08N3 G
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Packaging Series FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Operating Temperature Mounting Type Package / Case Supplier Device Package
   
IPB025N08N3 G Datasheet IPB025N08N3 G - Infineon Technologies IPB025N08N3 GTR-ND MOSFET N-CH 80V 120A TO263-3 4,000 - Immediate
2.35886 1,000 Tape & Reel (TR)?
Alternate Packaging
OptiMOS™ MOSFET N-Channel, Metal Oxide Standard 80V 120A (Tc) 2.5 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 300W -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-2
IPB025N08N3 G Datasheet IPB025N08N3 G - Infineon Technologies IPB025N08N3 GCT-ND MOSFET N-CH 80V 120A TO263-3 5,912 - Immediate
4.60000 1 Cut Tape (CT)?
Alternate Packaging
OptiMOS™ MOSFET N-Channel, Metal Oxide Standard 80V 120A (Tc) 2.5 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 300W -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-2
IPB025N08N3 G Datasheet IPB025N08N3 G - Infineon Technologies IPB025N08N3 GDKR-ND MOSFET N-CH 80V 120A TO263-3 5,912 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
OptiMOS™ MOSFET N-Channel, Metal Oxide Standard 80V 120A (Tc) 2.5 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 300W -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-2
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16:07:43 5/25/2016