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IPB019N08N3 G
 
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Packaging Series Part Status FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Operating Temperature Mounting Type Package / Case Supplier Device Package
   
IPB019N08N3 G Datasheet IPB019N08N3 G - Infineon Technologies IPB019N08N3 GTR-ND MOSFET N-CH 80V 180A TO263-7 18,000 - Immediate
2.44972 1,000 Tape & Reel (TR)?
Alternate Packaging
OptiMOS™ Active MOSFET N-Channel, Metal Oxide Standard 80V 180A (Tc) 1.9 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 300W -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB PG-TO263-7
IPB019N08N3 G Datasheet IPB019N08N3 G - Infineon Technologies IPB019N08N3 GCT-ND MOSFET N-CH 80V 180A TO263-7 18,579 - Immediate
4.78000 1 Cut Tape (CT)?
Alternate Packaging
OptiMOS™ Active MOSFET N-Channel, Metal Oxide Standard 80V 180A (Tc) 1.9 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 300W -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB PG-TO263-7
IPB019N08N3 G Datasheet IPB019N08N3 G - Infineon Technologies IPB019N08N3 GDKR-ND MOSFET N-CH 80V 180A TO263-7 18,579 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
OptiMOS™ Active MOSFET N-Channel, Metal Oxide Standard 80V 180A (Tc) 1.9 mOhm @ 100A, 10V 3.5V @ 270µA 206nC @ 10V 14200pF @ 40V 300W -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB PG-TO263-7
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17:33:45 8/30/2016