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BSC028N06NS
 
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Packaging Series FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Operating Temperature Mounting Type Package / Case Supplier Device Package
   
BSC028N06NS Datasheet BSC028N06NS - Infineon Technologies BSC028N06NSTR-ND MOSFET N-CH 60V 23A TDSON-8 30,000 - Immediate
0.74480 5,000 Tape & Reel (TR)?
Alternate Packaging
OptiMOS™ MOSFET N-Channel, Metal Oxide Standard 60V 23A (Ta), 100A (Tc) 2.8 mOhm @ 50A, 10V 2.8V @ 50µA 37nC @ 10V 2700pF @ 30V 2.5W -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8
BSC028N06NS Datasheet BSC028N06NS - Infineon Technologies BSC028N06NSCT-ND MOSFET N-CH 60V 23A TDSON-8 36,174 - Immediate
1.70000 1 Cut Tape (CT)?
Alternate Packaging
OptiMOS™ MOSFET N-Channel, Metal Oxide Standard 60V 23A (Ta), 100A (Tc) 2.8 mOhm @ 50A, 10V 2.8V @ 50µA 37nC @ 10V 2700pF @ 30V 2.5W -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8
BSC028N06NS Datasheet BSC028N06NS - Infineon Technologies BSC028N06NSDKR-ND MOSFET N-CH 60V 23A TDSON-8 36,174 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
OptiMOS™ MOSFET N-Channel, Metal Oxide Standard 60V 23A (Ta), 100A (Tc) 2.8 mOhm @ 50A, 10V 2.8V @ 50µA 37nC @ 10V 2700pF @ 30V 2.5W -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8
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17:07:17 6/24/2016