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Packaging Series FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Operating Temperature Mounting Type Package / Case Supplier Device Package
   
IRFHM4226TRPBF Datasheet IRFHM4226TRPBF - Infineon Technologies Americas Corp. IRFHM4226TRPBFTR-ND MOSFET N CH 25V 28A PQFN 0
0.53760 4,000 Tape & Reel (TR)?
Alternate Packaging
HEXFET® MOSFET N-Channel, Metal Oxide Standard 25V 28A (Ta) 2.2 mOhm @ 30A, 10V 2.1V @ 50µA 32nC @ 10V 2000pF @ 13V 2.7W -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad
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IRFHM4226TRPBF Datasheet IRFHM4226TRPBF - Infineon Technologies Americas Corp. IRFHM4226TRPBFCT-ND MOSFET N CH 25V 28A PQFN 3,895 - Immediate
1.31000 1 Cut Tape (CT)?
Alternate Packaging
HEXFET® MOSFET N-Channel, Metal Oxide Standard 25V 28A (Ta) 2.2 mOhm @ 30A, 10V 2.1V @ 50µA 32nC @ 10V 2000pF @ 13V 2.7W -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad
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IRFHM4226TRPBF Datasheet IRFHM4226TRPBF - Infineon Technologies Americas Corp. IRFHM4226TRPBFDKR-ND MOSFET N CH 25V 28A PQFN 3,895 - Immediate
Digi-Reel® 1 Digi-Reel®?
Alternate Packaging
HEXFET® MOSFET N-Channel, Metal Oxide Standard 25V 28A (Ta) 2.2 mOhm @ 30A, 10V 2.1V @ 50µA 32nC @ 10V 2000pF @ 13V 2.7W -55°C ~ 150°C (TJ) Surface Mount 8-TQFN Exposed Pad
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15:18:09 5/3/2016