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Si7655DN, −20 V P-Channel MOSFET

−20 V P-Channel MOSFET in 3.3 mm Square Package With Industry-Low
On-Resistance


Vishay's Si7655DN, −20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package offers on-resistance of just 4.8 mΩ maximum at a 4.5 V gate drive. The Si7655DN is also the first device to be released in a new version of the Vishay Siliconix PowerPAK® 1212 package, which enables lower-RDS(on) devices while providing a 28 % slimmer nominal profile of 0.75 mm and maintaining the same PCB land pattern.
Vishay's Si7655DN - 20 V P-Channel MOSFET

Benefits
  • New version of 3.3 mm by 3.3 mm PowerPAK 1212 package features a slimmer 0.75 mm profile
  • Saves valuable board space and height
  • Utilizes industry-leading P-channel Gen III technology
  • Ultra-low maximum on-resistance of 3.6 mΩ at a 10 V gate drive, 4.8 mΩ at 4.5 V, and 8.5 mΩ at 2.5 V
  • Improvement of 17 % or better over next best competing −20 V devices
  • Allows designers to achieve lower voltage drops in their circuits and longer battery run times

Applications
  • Load switching and hot swapping in industrial systems; adaptor, battery, and load switches in charger circuits; and power management for smart phones, tablet PCs, and other mobile computing devices
  • Redundancy switching, OR-ing, and supervisory applications in fixed telecom, cell phone base station, and server/computer systems

Digi-Key P/N Manufacturer P/N Description  
SI7655DN-T1-GE3CT-ND SI7655DN-T1-GE3 MOSFET P-CH 20V D-S PPAK 1212 Datasheet
Available in Tape & Reel (-2-ND), Cut Tape (-1-ND), and custom Digi-Reel® (-6-ND)