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E Series Power MOSFETs

 

600 V and 650 V N-channel E Series power MOSFETs from Vishay/Siliconix


Vishay/Siliconix's E Series Power MOSFETs Vishay/Siliconix 600 V and 650 V N-channel power MOSFETs series with ultra-low maximum on-resistance and a wide range of current ratings. Based on Vishay’s next generation of Super Junction Technology, the E Series MOSFETs offer ultra-low gate charge and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications.

Featuring Super Junction Technology, Vishay’s E Series of 600 V and 650 V N-channel power MOSFETs achieve high levels of efficiency and power density, while offering lower input capacitance and increased switching speeds over a wide range of current ratings. The MOSFETs provide ultra-low maximum on-resistance from 39 mΩ to 600 mΩ at 10 V, which is 30% lower than previous-generation S Series devices for the same die size. This low on-resistance translates into extremely-low conduction losses to save energy in high-power, high-performance switch-mode applications. Available in the TO-247, TO-220, TO-220 FullPAK, Thin Lead TO-220 FullPAK, TO-251 (IPAK), TO-252 (DPAK), and TO-263 (D²PAK) packages, the E Series offers ultra-low gate charge and low gate charge times on-resistance FOM for power conversion applications.

Application Note: How to Select the Right MOSFET for Power Factor Correction Applications

Application Note: Two-Switch Forward Converter: Operation, FOM, and MOSFET Selection Guide

Product Sheet

Vishay extends 600V N-Channel Power MOSFET series with 17 new devices

Features
  • Charge Balancing Super Junction Technology
  • Reduces on-resistance by 30% compared to previous-generation devices for increased efficiency and power density
  • Wide range of current ratings from 6 A to 73 A
  • Ultra-low maximum on-resistance from 39 mΩ to 600 mΩ at 10 V
  • Low gate charge and standard FOM
  • Lower output capacitance (Coss) for lower Co(er) losses
  • Increased switching speeds
  • Avalanche (UIS) rated for reliable operation
  • Compliant to RoHS Directive 2002/95/EC
  • Offered in TO-247, TO-220, TO-220 FullPAK, Thin Lead TO-220 FullPAK, TO-251 (IPAK), TO-252 (DPAK), and TO-263 (D²PAK) packages


Power factor correction power loss versus on-resistance graph

Digi-Key P/N Manufacturer P/N Description  
SIHU7N60E-GE3-ND SIHU7N60E-GE3 MOSFET N CH 600V 7A TO-251 Datasheet
SIHD7N60E-GE3-ND SIHD7N60E-GE3 MOSFET N CH 600V 7A TO-252 Datasheet
SIHB15N60E-GE3-ND SIHB15N60E-GE3 MOSFET N CH 600V 15A DPAK Datasheet
SIHB33N60E-GE3-ND SIHB33N60E-GE3 MOSFET N CH 600V 33A TO-263 Datasheet
SIHP30N60E-E3-ND SIHP30N60E-E3 MOSFET N-CH 600V 29A TO220AB Datasheet
SIHG30N60E-E3-ND SIHG30N60E-E3 MOSFET N-CH 600V 29A TO247AC Datasheet
SIHF30N60E-E3-ND SIHF30N60E-E3 MOSFET N-CH 600V 29A TO220 Datasheet
SIHG24N65E-E3-ND SIHG24N65E-E3 MOSFET N-CH 650V 24A TO247AC Datasheet
SIHP24N65E-E3-ND SIHP24N65E-E3 MOSFET N-CH 650V 24A TO220AB Datasheet
SIHB24N65E-E3-ND SIHB24N65E-E3 MOSFET N-CH 650V 24A D2PAK Datasheet
SIHP12N60E-E3-ND SIHP12N60E-E3 MOSFET N-CH 600V 12A TO220AB Datasheet
SIHF12N60E-E3-ND SIHF12N60E-E3 MOSFET N-CH 600V 12A TO220 FULLP Datasheet
SIHP15N60E-E3-ND SIHP15N60E-E3 MOSFET N-CH 600V 15A TO220AB Datasheet
SIHG73N60E-GE3CT-ND SIHG73N60E-GE3 MOSF N CH 600V 73A E TO247AC Datasheet
SIHP22N60E-E3-ND SIHP22N60E-E3 MOSFET N-CH 600V 21A TO220AB Datasheet
SIHF15N60E-E3-ND SIHF15N60E-E3 MOSFET N-CH 600V 15A TO220 FULLP Datasheet
SIHB30N60E-GE3-ND SIHB30N60E-GE3 MOSFET N-CH 600V 29A D2PAK Datasheet
SIHB12N60E-GE3-ND SIHB12N60E-GE3 MOSFET N CH 600V 12A TO263 Datasheet
SIHP7N60E-GE3-ND SIHP7N60E-GE3 MOSFET N CH 600V 7A TO-220AB Datasheet
SIHF7N60E-E3-ND SIHF7N60E-E3 MOSFET N CH 600V 7A TO-220 Datasheet
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