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SiA436DJ TrenchFET Power MOSFET

Vishay/Siliconix introduces a new 8 V, N-channel MOSFET with the industry’s lowest on-resistance in the 2 mm x 2 mm footprint area


Vishay/Siliconix's SiA436DJ 8 V, N-channel TrenchFET power MOSFET is designed to save valuable PCB space in portable electronics. For these devices, the MOSFET’s on-resistance values are 18% lower than previous generation solutions, and up to 64% lower than the closest competing N-channel device in the 2 mm x 2 mm footprint area. This ultra-low on-resistance translates into lower conduction losses for reduced power consumption, in addition to a lower voltage drop across the load switch to prevent unwanted under-voltage lockout. The SiA436DJ’s on-resistance ratings down to 1.2 V simplify circuit design by allowing the MOSFET to work with the low-voltage power rails common in handheld devices, providing longer battery operation between charges. Vishay/Siliconix's SiA436DJ 8 V N-Channel TrenchFET Power MOSFET

Features
  • Compact PowerPAK SC-70 package with 2 mm x 2 mm footprint area
  • Saves PCB space in portable electronics
  • Lowers conduction losses for reduced power consumption and higher efficiency
  • Prevents unwanted under-voltage lockout
  • On-resistance ratings down to 1.2 V allow the MOSFET to work with the low-voltage power rails common in handheld devices

Applications
  • Load switching in portable electronics such as smart phones and tablet PCs, in addition to mobile computing applications

Digi-Key P/N Manufacturer P/N Description  
SIA436DJ-T1-GE3CT-ND SIA436DJ-T1-GE3 MOSFET N-CH 8V D-S SC70-6L Datasheet
Available in Tape & Reel (-2-ND), Cut Tape (-1-ND), and custom Digi-Reel® (-6-ND)