Vishay General Semiconductor Supplier Page

100 V, 150 V, & 200 V TMBS


Trench MOS Barrier Schottky (TMBS®) rectifiers from Vishay General Semiconductor


Vishay’s patented Trench MOS Barrier Schottky (TMBS®) rectifiers are available with seven voltage ratings from 45 V to 200 V and several different package options to serve a wide range of system requirements. TMBS offers several advantages over planar Schottky rectifiers. As operating voltages move to 45 V and above, planar Schottky rectifiers tend to lose their advantage of fast switching speeds and low forward voltage drop to a substantial degree. The patented TMBS structure addresses this issue by diminishing minority carrier injections to the drift region, thus minimizing stored chargers and improving switching speeds. Vishay's 100 V, 150 V & 200 V TMBS

Features Applications
  • Trench MOS Schottky technology
  • Low forward voltage drop
  • High efficiency operation
  • Solder dip 275°C max. 10 s, per JESD 22-B106
  • AEC-Q101 qualified
  • High frequency inverters
  • Switching power supply
  • Freewheeling diodes
  • DC-to-DC converters
  • Reverse battery protection

Digi-Key P/N Manufacturer P/N Description  
V10150C-M3/4WGI-ND V10150C-M3/4W DIODE SCHOTTKY 150V 10A TO220AB Datasheet
V30150C-M3/4WGI-ND V30150C-M3/4W DIODE SCHOTTKY 150V 30A TO220AB Datasheet
V40150C-M3/4WGI-ND V40150C-M3/4W DIODE SCHOTTKY 150V 40A TO220AB Datasheet
VB10150C-E3/4WGI-ND VB10150C-E3/4W DIODE SCHOTTKY 150V 10A TO263AB Datasheet
VB30150C-E3/4WGI-ND VB30150C-E3/4W DIODE SCHOTTKY 150V 30A TO263AB Datasheet
VB40150C-E3/4WGI-ND VB40150C-E3/4W DIODE SCHOTTKY 40A 150V DUAL Datasheet
VBT10200C-E3/4WGI-ND VBT10200C-E3/4W DIODE SCHOTTKY 200V 10A TO263AB Datasheet
VSB2200S-M3/54GICT-ND VSB2200S-M3/54 DIODE SCHOTTKY 200V 2A AXIAL Datasheet
VSB3200-M3/54GICT-ND VSB3200-M3/54 DIODE SCHOTTKY 200V 3A DO-201AD Datasheet
VSSA310S-M3/61TGICT-ND VSSA310S-M3/61T DIODE SCHOTTKY 100V 3A DO-214AC Datasheet
VT10200C-E3/4WGI-ND VT10200C-E3/4W DIODE SCHOTTKY 200V 10A TO220AB Datasheet