Toshiba America Electronic Components Distributor

DTMOSIV Superjunction MOSFETs


Ultra-low RDS(ON), 600 V Superjunction MOSFETs from Toshiba


Toshiba's DTMOSIV Superjunction MOSFETsWith ultra-low RDS(ON), Toshiba’s 600 V DTMOSIV Superjunction (SJ) MOSFETs are ideal switching devices for switching power supplies, micro inverters, adaptors, photovoltaic inverters and other power applications that demand a combination of high-speed, high-efficiency and low EMI noise.

Superjunction MOSFETs offer ultra-low on resistance without power loss penalties. As a result, Toshiba’s new DTMOSIV process, which is being deployed in the company’s latest family of high-speed, high-efficiency 600 V power MOSFETs, offers on-resistance ratings that are up to 30 percent lower than third-generation DTMOS products for the same die size.

The benefit is that designers can now choose a 600 V MOSFET in a TO-220SIS package with an RDS(ON) of just 0.065 Ω, or a similar device in a TO-247 package with an RDS(ON) down to 0.04 Ω.

In addition to driving down on resistance, the DTMOSIV process has allowed Toshiba to minimize MOSFET output capacitance (Coss) for optimized switching power supply operation at light load. An optimized gate-drain capacitance (Cgd) delivers improved DV/DT switching control, while an optimized RDS(ON)*Qg figure of merit supports high-efficiency switching. By supporting lower DV/DT ratings, DTMOSIV also reduces EMI noise in high-speed switching circuitry.

Features Applications
  • Optimized switching characteristics:
    • Easy to control
    • Low EMI
  • Improved RDS(ON) x area
  • Wide RDS(ON) range variation
    • 18 mΩ to 900 mΩ (Max)
  • Package line-up includes:
    • DPAK, IPAK, D²PAK, I²PAK, TO-220, TO-220SIS, TO-247, TO-3P(N), TO-3P(L)
  • Switching power supplies
  • Photovoltaic inverters
  • Micro inverters
  • Adaptors

Digi-Key P/N Manufacturer P/N Description  
TK6A60WS4VX-ND TK6A60W,S4VX MOSFET N CH 600V 6.2A TO-220SIS Datasheet
TK7P60WRVQCT-ND TK7P60W,RVQ MOSFET N CH 600V 7A DPAK Datasheet
TK10P60WRVQCT-ND TK10P60W,RVQ MOSFET N CH 600V 9.7A DPAK Datasheet
TK31E60WS1VX-ND TK31E60W,S1VX MOSFET N CH 600V 30.8A TO-220 Datasheet
TK31J60WS1VQ-ND TK31J60W,S1VQ MOSFET N CH 600V 30.8A TO-3P(N) Datasheet
TK31A60WS4VX-ND TK31A60W,S4VX MOSFET 600V 30.8A TO-220SIS Datasheet
TK39J60WS1VQ-ND TK39J60W,S1VQ MOSFET N-CH 600V 38.8A TO-3P Datasheet
TK16A60W5S4VX-ND TK16A60W5,S4VX MOSFET N CH 600V 15.8A TO-220SIS Datasheet
TK31J60W5S1VQ-ND TK31J60W5,S1VQ MOSFET N CH 600V 30.8 TO-3P(N) Datasheet
TK39J60W5S1VQ-ND TK39J60W5,S1VQ MOSFET N CH 600V 38.8A TO-3P(N) Datasheet
TK16A60WS4VX-ND TK16A60W,S4VX MOSFET N CH 600V 15.8A TO-220SIS Datasheet
TK12A60WS4VX-ND TK12A60W,S4VX MOSFET N CH 600V 11.5A TO-220SIS Datasheet