|ROHM Semiconductor's BD2270HFV is an IC with a single built-in external N-channel MOSFET driver circuit that provides for low ON-resistance switching. In addition, a charge pump circuit for driving the NMOSFET Gate along with a comparator circuit with hysteresis for the control and discharge circuits is built into the chip, providing greater space savings and ease of use compared to discrete configurations.
The BD2270HFV is offered in the compact HVSOF5 package (1.6×1.6×0.6mm), reducing the number of components compared with discrete solutions for large current applications. As a result, surface mount area is decreased by 35 percent, making this device ideal for portable devices of all types.
Supplying a high signal to the AEN terminal discharges the load from the internal charge pump. In addition, connecting a capacitor to the gate terminal mitigates inrush current due to large capacitive loads, resulting in smooth NMOSFET startup.