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Broadband Power LDMOS Transistor


The BLF645 is a 100 W LDMOS RF power push-pull transistor suitable for the frequency range HF to 1400 MHz


The BLF645 from NXP was developed as a multi-purpose device, with broadcast and ISM applications in mind. The device is based on NXP’s 32 V LDMOS technology, is unmatched and boasts > 100 W P1dB output power at 18 dB gain and 56% drain efficiency in the frequency range from 1 to 1400 MHz. The package is of the push-pull type to optimize for broadband operation.

For power amplifiers in the frequency range of 10 MHz to 3.8 GHZ, RF Laterally Diffused MOS (LDMOS) transistors are the established choice of technology because of their excellent power capabilities, gain, efficiency, linearity, reliability and low cost. This technology also delivers for broadband applications in broadcast and ISM (industrial, scientific and medical), where additional requirements like bandwidth, ruggedness, and thermal resistance are important.
NXP's Broadband Power LDMOS Transistor

Features
  • CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:
    • Average output power = 100 W
    • Power gain = 18 dB
    • Drain efficiency = 56%
  • Two tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device:
    • Peak envelope load power = 100 W
    • Power gain = 18 dB
    • Drain efficiency = 45%
    • Intermodulation distortion = -32 dBc
  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Digi-Key P/N Manufacturer P/N Description  
568-7549-ND BLF645,112 TRANSISTOR PWR LDMOS SOT540A Datasheet